AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeP

Paper SC+EL+SS-WeP18
Visible Emission from Electroluminescent Devices using an Amorphous AlN:Cu, Mn, and Cr Thin Film Phosphor

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: M.L. Caldwell, Ohio University
Authors: M.L. Caldwell, Ohio University
V.I. Dimitrova, Ohio University
M.E. Kordesch, Ohio University
H.H. Richardson, Ohio University
P.G. Van Patten, Ohio University
Correspondent: Click to Email
Electroluminescence (EL) studies of AlN:Cu, Mn, and Cr alternating-current thin-film electroluminescent (ACTFEL) devices were performed at 300 K. Thin films of Cu, Mn, and Cr doped AlN, ~ 200 nm thick, were grown on p-doped silicon (111) substrates using RF magnetron sputtering in a nitrogen atmosphere. A transparent layer utilizing indium tin oxide was employed as the top layer contact. A strong bluish-green emission from the AlN:Cu films was observed under reverse bias due to electron impact excitation of the Cu atoms. The emission spectrum consisted of one broad peak in the visible region of 475 nm. a strong red emission from the AlN:Mn films was observed also under reverse bias due to electron impact excitation of the Mn atoms. There were two sharp emission peaks in the visible region at 680 nm and 700 nm. Studies of incorporationg the Cr@super +3@ ion will be performed to try to overcome the charge compensation problem. Temperature-dependent cathodoluminscence (CL) and photoluminscence (PL) studies will be performed between 30 - 450 K to determine the relationship of them to the EL results and show the optimum conditions for device performance.