AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeP

Paper SC+EL+SS-WeP20
Studies of the Surface Morphology, Chemical and Structural Changes of Ion Bombarded Silicon Carbide

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: P. McCarty, University of Alabama, Huntsville
Authors: P. McCarty, University of Alabama, Huntsville
C.I. Muntele, Alabama A&M University
I. Muntele, Alabama A&M University
M.A. George, University of Alabama, Huntsville
D. Ila, Alabama A&M University
D.B. Poker, Oak Ridge National Laboratory
D.K. Hensley, Oak Ridge National Laboratory
Correspondent: Click to Email
Silicon carbide is gaining increasing interest for high temperature/harsh environment applications including miniature integrated sensors. In the past few years, efforts have been made toward controlling the defects and impurification that occur during various growth and fabrication processes. This work is intended to analyze the surface damage that occurs during ion implantation of silicon carbide, and the evolution of these defects. In order to correlate the effects that surface damage has on the sensing properties of ion implantation based silicon carbide gas sensors we have characterized these sensors under various conditions. We present the results of our investigation of the morphological, electrical and spectroscopic characteristics of ion implanted silicon-face 6H-SiC. In this work we have used He, O, Pd, and Au at energies between 100 keV to 8 MeV at fluences between 1 x 1015/Cm2 to 3 x 1017/Cm2. The ion bombardments were performed at both room temperature (300oK) and at elevated temperature (773oK). Atomic force microscopy, surface potential measurements and electric field microscopy was performed before and after ion implantation, as well as after the post-implantation high temperature annealing. This study is correlated with results obtained using micro-Raman, FTIR and Rutherford Backscattering Spectrometry. @FootnoteText@ We would like to thank Dr. David Larkin, NASA Glenn Research Center. Research sponsored by the NASA Grant No. NG3-2302, and partially by the Center for Irradiation of Materials, Alabama A&M University and the Division of Materials Sciences, U.S. Dept. of Energy, at the Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U. S. Department of Energy under contract DE-AC05-00OR22725