AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeP

Paper SC+EL+SS-WeP10
Influence of Growth Direction on Order-Disorder Transition in (GaAs)@sub (1-x)@(Ge)@sub 2x@ Semiconductors

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: H. Navarro-Contreras, University, Mexico
Authors: A.G. Rodriguez, University, Mexico
H. Navarro-Contreras, University, Mexico
M.A. Vidal, University, Mexico
Correspondent: Click to Email
We provide direct evidence of the dependence on the growth direction of the critical concentration of IV atoms at the order-disorder transition in ternary metastable (III-V)-IV, zincblende-diamond semiconductor alloys. The excellent agreement between the experimental and model predicted critical concentrations is evidence that the atomic ordering in these alloys is ruled almost entirely by substrate geometry. We report the observation of the critical concentration dependence on substrate orientation in (GaAs)@sub (1-x)@(Ge@sub 2@)@sub x@ metastable alloys, epitaxially grown on (001), (111), (112) and (113) GaAs. A different long-range order parameter behavior with Ge concentration is obtained for each growth direction, 0.36, 0.96, 0.59, and 0.50 ± 0.03, respectively, numbers that compare well with results of a Montecarlo simulation of the growth, 0.33, 1.0, 0.64 and 0.54, respectively.