| AVS 49th International Symposium | |
| Dielectrics | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| DI+EL-WeP2 Remote Plasma-assisted Cleaning, Oxidation and Oxidation/Nitridation of GaN for Low Defect Density GaN-SiO@sub 2@ Interfaces C. Bae, G.B. Rayner, G. Lucovsky, North Carolina State University |
| DI+EL-WeP3 Screen Printing of PMN-PT Thick Films on the Pt-coated Silicon Wafers B.M. Park, Y.-S. Seo, G.S. Lee, University of Texas at Dallas |
| DI+EL-WeP4 Influence of Impurities on Attenuation of Acoustic Waves in LiNbO@sub3@ Crystals F.R. Akhmedzhanov, M.M. Akhmedjanova, Samarkand State University, Uzbekistan |
| DI+EL-WeP5 Study of Molecularly Templated Nanoporous Silica Dielectrics with an @alpha@-SiC:H Etch Stop Layer Deposited by High Density Plasma Chemical Vapor Deposition F.M. Pan, B.W. Wu, A.T. Cho, T.G. Tsai, K.C. Tsai, National Nano Device Laboratories, Taiwan, R.O.C., C.M. Yang, K.J. Chao, National Tsinghau University, Taiwan, R.O.C. |
| DI+EL-WeP6 Degradation and Modification of Gate Dielectric in MOS Structures by High-field Multilevel Current Stress G.G. Bondarenko, Moscow Institute of Electronics and Mathematics, Russia, V.V. Andreev, A.A. Stolyarov, V.E. Drach, Bauman Moscow State Technical University, Russia |
| DI+EL-WeP7 Improvement of (Ba,Sr)TiO@sub 3@ Dielectric Properties by in-situ Formation of IrO@sub 2@ on Ir Electrodes C.H. Lai, Y.C. Wu, W.C. Chen, National Tsing Hua University, Taiwan, S. Ma, Applied Materials |
| DI+EL-WeP9 Medium to High Vacuum Metal Organic Chemical Vapor Deposition of Al@sub 2@O@sub 3@ Z. Song, R.D. Geil, V. Parwar, D.W. Crunkleton, C.A. Hales, B.R. Rogers, Vanderbilt University |
| DI+EL-WeP10 N Composition and Chemical State Profiling in Thermally and Plasma Nitridated Silicon Oxide Films Y.S. Chung, Samsung Advanced Institute of Technology, Korea, H.S. Chang, D.W. Moon, Korea Institute of Standards and Science |
| DI+EL-WeP11 Study on Damage Recovery of Etched (Ba@sub 0.6@,Sr@sub 0.4@)TiO@sub 3@ Thin Films in Ar/CF@sub 4@ Plasma P.S. Kang, D.P. Kim, K.T. Kim, C.I. Kim, Chung-Ang University, Korea, T.H. Kim, YIT, Korea, S.J. Lee, ETRI, Korea |
| DI+EL-WeP12 Etching Characteristics of (Pb,Sr)TiO@sub 3@ Thin Films Using Cl@sub 2@/Ar Inductively Coupled Plasma G.H. Kim, D.P. Kim, K.T. Kim, C.I. Kim, Chung-Ang University, Korea |
| DI+EL-WeP13 Etching Characteristics of Bi@sub 4-x@Eu@sub x@Ti@sub 3@O@sub 12@ Thin Films Using Inductively Coupled Plasma K.T. Lim, D.P. Kim, K.T. Kim, C.I. Kim, Chung-Ang University, Korea |
| DI+EL-WeP14 Etching Characteristics of YMnO@sub 3@ Thin Films in Cl Based Inductively Coupled Plasma J.H. Park, D.P. Kim, K.T. Kim, C.I. Kim, E.G. Chang, Chung-Ang University, Korea |
| DI+EL-WeP15 The Effect of Cr Doping on the Microstructural and Dielectric Properties of (Ba@sub 1-x@,Sr@sub x@)TiO@sub 3@ Thin Films for Tunable Microwave Device Applications C.I. Lee, Ansan College of Technology, Korea, K.T. Kim, C.I. Kim, D.H. Kang, Chung-Ang University, Korea |
| DI+EL-WeP16 Cyclic-CVD of Strontium Tantalate for Alterantive Gate Dielectric Applications H.S. Choi, Y.M. Jang, M.J. Kang, I.H. Choi, Korea University |
| DI+EL-WeP17 Surface Preparation of Si (100) Substrates Prior to Deposition of High K Dielectrics V. Pawar, Z. Song, D.W. Crunkleton, B.R. Rogers, Vanderbilt University |
| DI+EL-WeP18 Comparison of Reactive Sputtered Oxide Films from Zr and Hf Metal Targets with Poly-Si or Poly-SiGe Gate J.-H. Yoo, Yonsei University, Korea, S.-W. Nam, Samsung Electronics Co., Ltd., Korea, S. Nam, D.-H. Ko, Yonsei University, Korea |
| DI+EL-WeP19 Mechanical and Optical Properties of Low Dielectric Constant Silicon Containing Fluorocarbon Films by Plasma Enhanced Chemical Vapor Deposition Y.Y. Jin, Louisiana State University, G.S. Lee, The University of Texas at Dallas |
| DI+EL-WeP20 Effect of Low Pressure Annealing for Low Temperature Crystallization of SrBi@sub 2@Ta@sub 2@O@sub 9@ Ferroelectric Thin Films H.S. Choi, K. Lee, G.S. Lim, Korea University, Y.T. Kim, S.I. Kim, Korea Institute of Science and Technology, I.H. Choi, Korea University |