AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP6
Degradation and Modification of Gate Dielectric in MOS Structures by High-field Multilevel Current Stress

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: G.G. Bondarenko, Moscow Institute of Electronics and Mathematics, Russia
Authors: G.G. Bondarenko, Moscow Institute of Electronics and Mathematics, Russia
V.V. Andreev, Bauman Moscow State Technical University, Russia
A.A. Stolyarov, Bauman Moscow State Technical University, Russia
V.E. Drach, Bauman Moscow State Technical University, Russia
Correspondent: Click to Email
A new technique for the modification and the degradation analysis of gate dielectric in the MOS structures by means of high-field tunnel electron injection is proposed. It was found out that the injection treatment of the MOS structures by multilevel current stress allows to increase the charge-to-breakdown. The technique is proposed to be used for investigation of the gate dielectric degradation in the MOS structures during and after high-field stress. The proposed technique differs from an ordinary constant current stress technique in the additional measuring level of current, thus providing the possible to estimate the dielectric charge change. The additional measuring level of injection current allows to decrease significantly the error of positive charge density measurement in the dielectric. Disregarding of positive charge trapping during the initial part of injection of electrons into dielectric while stress mode is being established causes the error above. The technique allows right after high-field injection without sample re-switching to investigate both the generation and the relaxation of positive charge, created by injected electrons into MOS structure gate dielectric in wide range of electric fields. Using the technique proposed, the injection degradation of the MOS structures with thermal SiO@sub 2@ film was studied. Furthermore, the possibility of modifying the film above to increase the injection reliability was shown.