AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP17
Surface Preparation of Si (100) Substrates Prior to Deposition of High K Dielectrics

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: V. Pawar, Vanderbilt University
Authors: V. Pawar, Vanderbilt University
Z. Song, Vanderbilt University
D.W. Crunkleton, Vanderbilt University
B.R. Rogers, Vanderbilt University
Correspondent: Click to Email
We have investigated different fluoride based reagents for etching of native oxide on silicon surfaces prior to chemical vapor deposition of high K dielectrics. We have also investigated different cleaning agents (water and organic based) to see the effect on the native oxide growth and surface cleanliness. The native oxide growth was monitored by spectroscopic ellipsometry and x ray photoelectron spectroscopy. We have shown that time logarithmic model can be used to model the data and useful information about the characteristic time (incubation time) can be obtained for different treatments.