AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP5
Study of Molecularly Templated Nanoporous Silica Dielectrics with an @alpha@-SiC:H Etch Stop Layer Deposited by High Density Plasma Chemical Vapor Deposition

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: B.W. Wu, National Nano Device Laboratories, Taiwan, R.O.C.
Authors: F.M. Pan, National Nano Device Laboratories, Taiwan, R.O.C.
B.W. Wu, National Nano Device Laboratories, Taiwan, R.O.C.
A.T. Cho, National Nano Device Laboratories, Taiwan, R.O.C.
T.G. Tsai, National Nano Device Laboratories, Taiwan, R.O.C.
K.C. Tsai, National Nano Device Laboratories, Taiwan, R.O.C.
C.M. Yang, National Tsinghau University, Taiwan, R.O.C.
K.J. Chao, National Tsinghau University, Taiwan, R.O.C.
Correspondent: Click to Email
@alpha@-SiC:H thin films were deposited on nanoporous silica thin films as the etch stop layer by high-density plasma chemical vapor deposition (HDP-CVD) using trimethylsilane (3MS) as the precursor. The @alpha@-SiC:H thin film can effectively improve hydrophobicity of the nanoporous film during HDP-CVD deposition, and, therefore, improve the dielectric property of the nanoporous dielectric layer. Electron spectroscopy for chemical analysis (ESCA) and Auger electron spectroscopy (AES) depth profiles reveal that the methyl groups uniformly distribute in the nanoporous film after the @alpha@-SiC:H film deposition. After the @alpha@-SiC:H film deposition and hydrogen plasma treatment, the effective dielectric constant of the @alpha@-SiC:H/silica film can be as low as 1.65, and slowly rises to 1.98 after a 25 day storage in the cleanroom ambient. This study shows that hydrophobicity modification of the nanoporous silica film and the etch stop layer deposition can be completed at the same time during the @alpha@-SiC:H depostion. Moreover, calcination of the surfactant templated nanoporous film can be accomplished in the same HDP-CVD before the etch stop layer deposition. This obviously simplifies the integration steps of nanoporous silica materials in the dual-damascene interconnect technology.