AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP18
Comparison of Reactive Sputtered Oxide Films from Zr and Hf Metal Targets with Poly-Si or Poly-SiGe Gate

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: J.-H. Yoo, Yonsei University, Korea
Authors: J.-H. Yoo, Yonsei University, Korea
S.-W. Nam, Samsung Electronics Co., Ltd., Korea
S. Nam, Yonsei University, Korea
D.-H. Ko, Yonsei University, Korea
Correspondent: Click to Email
As CMOS devices are being continuously scaled down, gate oxides with EOT < 15Ã… will be required. Key process issues in conventional SiO@sub 2@ scaling are with boron penetration, gate leakage for very thin gate oxides and depletion effects in the polysilicon electrodes. Therefore, dielectric materials with higher dielectric constant than SiO@sub 2@, possibly large band-gap, low interface state density, and good thermal stability have drawn a lot of attention as alternative gate dielectric materials. Recently, ZrO@sub 2@, HfO@sub 2@ and their silicates have been considered as promising alternative materials due to their high dielectric constant and good thermal stability with Si substrates. We investigated the microstructures and electrical properties of reactive sputtered ZrO@sub 2@ films and HfO@sub 2@ films on Si (100) substrate. And the thermal stabilities and compatibilities between the films with poly-Si gate electrode were compared. The films as a gate dielectric were deposited by reactive dc magnetron sputtering, followed by thermal annealing in N@sub 2@ gas ambient using furnace and subsequently the microstructures of the films were investigated by Ellipsometry, XRD, AFM, TEM and XPS. The interfaces with poly-Si or Si substrate were carefully observed by HR-TEM, XPS/AES and SIMS with annealing temperature. Also, the properties of the films with poly-SiGe as alternative gate electrode were investigated. The electrical properties were assessed and compared by C-V and I-V measurements of Metal-Oxide-Semiconductor capacitor structure.