AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP15
The Effect of Cr Doping on the Microstructural and Dielectric Properties of (Ba@sub 1-x@,Sr@sub x@)TiO@sub 3@ Thin Films for Tunable Microwave Device Applications

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: C.I. Lee, Ansan College of Technology, Korea
Authors: C.I. Lee, Ansan College of Technology, Korea
K.T. Kim, Chung-Ang University, Korea
C.I. Kim, Chung-Ang University, Korea
D.H. Kang, Chung-Ang University, Korea
Correspondent: Click to Email
(Ba@sub 1-x@, Sr@sub x@)TiO@sub 3@ (BST) thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. We have investigated the structural, compositional and dielectric properties of BST thin film as a function of Cr dopant concentration from 0 to 15 mol% and analyzed using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The dielectric constant of the 300 nm Cr-doped BST thin film decreased as the Cr concentration increased. The loss tangent of 15% Cr doped BST thin film was higher than that of the pure film, but the 1~10 mol% Cr doped thin film was lower than that of the undoped BST thin film. @FootnoteText@ Acknowledgement: This work was supported by Korea Research Foundation Grant (KRF-2001-042-E00042).