AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP11
Study on Damage Recovery of Etched (Ba@sub 0.6@,Sr@sub 0.4@)TiO@sub 3@ Thin Films in Ar/CF@sub 4@ Plasma

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: P.S. Kang, Chung-Ang University, Korea
Authors: P.S. Kang, Chung-Ang University, Korea
D.P. Kim, Chung-Ang University, Korea
K.T. Kim, Chung-Ang University, Korea
C.I. Kim, Chung-Ang University, Korea
T.H. Kim, YIT, Korea
S.J. Lee, ETRI, Korea
Correspondent: Click to Email
In this study, (Ba@sub 0.6@,Sr@sub 0.4@)TiO@sub 3@ (BST) thin films on Pt/Ti/SiO@sub 2@/Si substrates were deposited by a sol-gel method and the inductively coupled plasma (ICP) etching behavior of BST thin films had been investigated by a function of Ar/CF@sub 4@ gas mixing ratio. We also investigated the influence of etching damage in BST films during the ICP process. For analysis of the Ar/CF@sub 4@ plasma-induced damage in the Pt/BST/Pt capacitor, measurements of leakage current density and dielectric constant was carried out at different substrate bias voltage, ICP power and gas mixing ratio. The physical damage and structure of etched BST thin films were investigated by atomic force microscopy (AFM) and x-ray diffraction (XRD). The existence of contamination on the surface of the etched BST was measured using an x-ray photoelectron spectroscopy (XPS) analysis. Fluorine atoms definitely disappeared after O@sub 2@ annealing at 700°C. From the electrical property and structure analysis, the reduction and recover of etching damage by re-annealing was effective in the additive O@sub 2@ into Ar/CF@sub 4@ rather than additive O@sub 2@ into Ar/Cl@sub 2@ plasma. @FootnoteText@ Acknowledgement: This work was supported by Korea Research Foundation Grant (KRF-2001-042-E00042).