AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP16
Cyclic-CVD of Strontium Tantalate for Alterantive Gate Dielectric Applications

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: Y.M. Jang, Korea University
Authors: H.S. Choi, Korea University
Y.M. Jang, Korea University
M.J. Kang, Korea University
I.H. Choi, Korea University
Correspondent: Click to Email
As gate oxide thickness in SiO@sub 2@-based MOS device decreases, new high-k dielectric materials are demanded to substitute for silicon dioxide. In this presentation, we will discuss our work on developing strontium tantalate for use as alternative gate dielectrics. We have grown strontium tantalate thin films on p-type Si substrate by cyclic chemical vapor deposition technique using Sr[Ta(OC@sub 2@H@sub 5@)@sub 5@(OC@sub 2@H@sub 4@OCH@sub 3@)]@sub 2@ as precursor. Our studies have included substrate temperatures between 250 and 400°C and post annealing temperatures 600 and 800°C. We have studied the surface and interface image, the structural properties and film compositions by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-ray Diffraction (XRD) and Rutherford Backscattering Spectrometry (RBS). Also we have investigated the applicability to MOS device through the capacitance voltage (C-V) measurement and leakage current measurement.