AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP14
Etching Characteristics of YMnO@sub 3@ Thin Films in Cl Based Inductively Coupled Plasma

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: J.H. Park, Chung-Ang University, Korea
Authors: J.H. Park, Chung-Ang University, Korea
D.P. Kim, Chung-Ang University, Korea
K.T. Kim, Chung-Ang University, Korea
C.I. Kim, Chung-Ang University, Korea
E.G. Chang, Chung-Ang University, Korea
Correspondent: Click to Email
YMnO@sub 3@ thin films are excellent dielectric materials for high integrated FRAM because YMnO@sub 3@ have a relatively low permittivity (@epsilon@@sub r@=20) and do not include volatile materials such as Pb and Bi which easy diffuse into the Si substrate and lead to point defects. To apply the YMnO@sub 3@ thin films on the highly integrated FRAMs, high-density plasma systems should utilized because it provides high degree of anisotropy and good selectivity. In this study, we etched YMnO@sub 3@ thin films in Cl based inductively coupled plasma (ICP). Etching characteristics of YMnO@sub 3@ thin films were investigated in terms of etch rate and selectivity as a function of gas mixing ratio, RF power, and substrate temperature. The diagnostics of the plasma were estimated using optical emission spectroscopy (OES). To investigate etching mechanisms of YMnO@sub 3@ thin film, chemical reactions on the etched surface of YMnO@sub 3@ thin films were investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). Etching profile was investigated by scanning electron microscopy (SEM).