AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP9
Medium to High Vacuum Metal Organic Chemical Vapor Deposition of Al@sub 2@O@sub 3@

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: Z. Song, Vanderbilt University
Authors: Z. Song, Vanderbilt University
R.D. Geil, Vanderbilt University
V. Parwar, Vanderbilt University
D.W. Crunkleton, Vanderbilt University
C.A. Hales, Vanderbilt University
B.R. Rogers, Vanderbilt University
Correspondent: Click to Email
Al@sub 2@O@sub 3@ is one of the most promising medium-k gate dielectric materials to replace SiO@sub 2@ in future high performance integrated circuits. Because of good interfacial properties of the Al@sub 2@O@sub 3@/Si system, the 2001 update of the ITRS indicates the possibility of using Al@sub 2@O@sub 3@ as an interfacial layer between silicon and high-k dielectrics that tend to form interfacial SiO@sub 2@ or silicate layers. This presentation reports results of our work on the deposition of Al@sub 2@O@sub 3@ onto cleaned silicon substrates. We have performed two types of deposition experiments. First, Al@sub 2@O@sub 3@ films were deposited on p-type Si(100) substrates by metal organic chemical vapor deposition from aluminum tri-s-butoxide. We used a temperature range of 300 - 450 °C and a pressure range in the medium to high vacuum regimes. Second, silicon surfaces were briefly exposed to the precursor gas at low temperatures in our one-of-a kind UHV-CVD system. The gas was then pumped out and the silicon substrate was heated to a preset temperature. The gases released during temperature ramping were analyzed by in-situ quadruple mass spectroscopy (QMS). The properties of the films were characterized by Spectroscopic Ellipsometry (SE), Time of Flight Medium Energy Back Scattering (ToF-MEBS), RBS, XPS, XRD and ATR FT-IR.