AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP20
Effect of Low Pressure Annealing for Low Temperature Crystallization of SrBi@sub 2@Ta@sub 2@O@sub 9@ Ferroelectric Thin Films

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: K. Lee, Korea University
Authors: H.S. Choi, Korea University
K. Lee, Korea University
G.S. Lim, Korea University
Y.T. Kim, Korea Institute of Science and Technology
S.I. Kim, Korea Institute of Science and Technology
I.H. Choi, Korea University
Correspondent: Click to Email
A new low pressure annealing method for low temperature crystallization of SrBi@sub 2@Ta@sub 2@O@sub 9@ thin films is proposed. SBT films were prepared on IrO@sub 2@ bottom electrode by metalorganic decomposition (MOD) method and annealed under low oxygen pressure by a modified rapid thermal annealing process. Under an oxygen pressure as high as 30 torr, the crystallization temperature inducing the ferroelectric SBT phase can be lowered to 650°C. Those films processed at 650°C showed satisfactory ferroelectric properties, that is, the remanent polarization (P@sub r@) and the coercive electric field (E@sub c@) were 5.68 µmC/cm@super 2@ and 61 kV/cm at an applied voltage of 5 V, respectively. The films also showed fatigue-free characteristics: no fatigue was observed up to about 10@super 10@ switching cycles.