AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP10
N Composition and Chemical State Profiling in Thermally and Plasma Nitridated Silicon Oxide Films

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: Y.S. Chung, Samsung Advanced Institute of Technology, Korea
Authors: Y.S. Chung, Samsung Advanced Institute of Technology, Korea
H.S. Chang, Korea Institute of Standards and Science
D.W. Moon, Korea Institute of Standards and Science
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The composition and chemical state of N in thermally and plasma nitridated silicon oxide films were depth profiled by X-ray Photoelectron Spectroscop (XPS) using a chemical etching method with HF. The nitrogen profile of thermally nitridated film differs from plasma nitridated one. Nitrogen is rich at surface in plasma nitridated oxide films, while N is rich at interface in thermally nitridated film. The N depth profiles from XPS were compared with those from medium energy ion scattering spectroscopy in a good agreement. The N 1s core level of plasma nitridated oxide shows a main species with N?Si3 bonding and small amounts of defect nitrogens due to plasma treatment. The change of chemical composition with annealing to cure these defect also will be discussed.