AVS 49th International Symposium
    Dielectrics Wednesday Sessions
       Session DI+EL-WeP

Paper DI+EL-WeP19
Mechanical and Optical Properties of Low Dielectric Constant Silicon Containing Fluorocarbon Films by Plasma Enhanced Chemical Vapor Deposition

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Poster Session
Presenter: Y.Y. Jin, Louisiana State University
Authors: Y.Y. Jin, Louisiana State University
G.S. Lee, The University of Texas at Dallas
Correspondent: Click to Email
Silicon containing fluorocarbon (SiCF) film for use as low-k interlayer dielectrics (ILD) has been investigated on mechanical and optical properties. The preparation of SiCF films is carried out by plasma enhanced chemical vapor deposition (PECVD) using precursors 5% disilan in helium (5%Si@sub 2@H@sub 6@/He) and tetrabluorocarbon (CF@sub 4@). Hardness and residual stress in the films subsequently measured using an atomic force microscopy (AFM) and the curvature method via Stoney's equation, respectively. The SiCF film samples were deposited on quartz plates to investigate the characteristics of optical transmission and optical energy gap. The optical transmission data were obtained in the wavelength range of 200 nm to 800 nm by the NIR-UV-VIS spectrophotometer at room temperature. The optical energy gaps of the films are calculated from a plot of Tauc extrapolations.