| IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
| Dielectrics | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| DI1-MoP1 Generation and Relaxation of Positive Charge in Gate Dielectric of MOS Structures at High-fields G.G. Bondarenko, Moscow Institute of Electronics and Mathematics, Russia, V.V. Andreev, A.A. Stolyarov, Bauman Moscow State Technical University, Russia |
| DI1-MoP2 Stability of Chemical Vapor Deposited Thin Films HFO@sub 2@ and HFSi@sub x@O@sub y@ H. Bhandari, V. Rangarajan, T.M. Klein, University of Alabama |
| DI1-MoP3 A Study of MOS Characteristics of Reoxidized HfO@sub 2@ Thin Film for Gate Oxide Applications H.-J. Choi, D.W. Lee, J.-H. Yoo, S.-W. Nam, D.-H. Ko, Yonsei University, Korea, J.-H. Ku, R&D Center Semiconductor Samsung Electronics Co., M.-H. Cho, Yonsei University, Korea, S. Choi, R&D Center Semiconductor Samsung Electronics Co., C.-W. Yang, Sungkyunkwan University, Korea |
| DI1-MoP4 Investigation of Tungsten Silicide Gate for the Integration with High-k Hafnium Oxide (HfO@sub 2@) in Metal-Oxide-Semiconductor Devices K. Roh, S. Yang, H. Kang, Y. Roh, G. Bae, D. Jung, N.-E. Lee, C.-W. Yang, Sungkyunkwan University, Korea |
| DI1-MoP5 Annealing Effects on Optical Properties of Hafnium Oxide Films Observed by Spectroscopic Ellipsometry Y.J. Cho, N.V. Nguyen, C.A. Richter, J.R. Ehrstein, National Institute of Standards and Technology |
| DI1-MoP6 Physical and Electrical Characteristics of W-TiN/HfO@sub 2@/Si (MOS) Devices S. Yang, K. Roh, H. Kang, Y. Roh, K. Kim, N.-E. Lee, Sungkyunkwan University, Korea |
| DI1-MoP7 Characteristics of HfO@sub 2@/HfSi@sub x@O@sub y@ Film as an Alternative Gate Dielectric in Metal-Oxide-Semiconductor Devices H. Kang, Y. Roh, G. Bae, D. Jung, C.-W. Yang, Sungkyunkwan University, Korea |
| DI1-MoP8 Interface Formation and Electrical Properties of TiN@sub x@ (Titanium Nitride)/HfO@sub 2@/Si Structure for Application in Gate Electrode Y.S. Ahn, K.J. Kim, S.H. Ban, N.-E. Lee, S. Yang, K. Roh, Y.H. Roh, Sungkyunkwan University, Korea |
| DI1-MoP9 Deposition and Characterization of Thin ZrO@sub2@ Films L. Koltunski, R.A.B. Devine, R. Marquardt, University of New Mexico |
| DI1-MoP10 Material and Electrical Characteristics of ZrO@sub 2@ Film Obtained by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) B.O. Cho, J. Wang, S.X. Lao, J.P. Chang, University of California, Los Angeles |
| DI1-MoP11 Characteristics of Zirconium Oxide with Different Gate Electrodes S.-W. Nam, J.-H. Yoo, D.W. Lee, D.-H. Ko, Yonsei University, Korea, J.-H. Ku, Samsung Electronics Co., Korea, M.-H. Cho, Yonsei University, Korea, S. Choi, Samsung Electronics Co., Korea, C.-W. Yang, Sungkyunkwan University, Korea |
| DI1-MoP12 Diffusion Studies of High k Gate Dielectric Candidates Hafnium and Zirconium Silicates into Si M.A. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, C. Huang, J.L. Duggan, B.E. Gnade, R.M. Wallace, University of North Texas, L Colombo, M. Bevan, M. Douglas, M. Visokay, Texas Instruments Inc. |
| DI1-MoP13 High-dielectric Constant Aluminum Oxide Films C. Falcony, CINVESTAV and ESFM-IPN, Mexico, M. Aguilar-Frutis, CICATA-IPN, Mexico, J. Guzman, CICATA-IPN, IIM-UNAM, Mexico, M. Garcia, IIM-UNAM, Mexico |
| DI1-MoP14 UHV-CVD of Al@sub 2@O@sub 3@ for Gate Dielectric Applications B.R. Rogers, Z. Song, R.D. Geil, T.P. Hanusa, R.A. Weller, Vanderbilt University |
| DI1-MoP15 Annealing Effects of Al@sub 2@O@sub 3@ Films Grown on Si(100) Y.S. Roh, M.-H. Cho, Y.K. Kim, S.A. Park, D.-H. Ko, C.N. Whang, K.H. Jeoung, Yonsei University, Korea |
| DI1-MoP16 Studies on Ta@sub 2@O@sub 5@ Thin Films Deposited on Si(100) by MOCVD and Sputtering Techniques P. Passacantando, L. Lozzi, V. Salerni, P. Picozzi, S. Santucci, University of L'Aquila, Italy |
| DI1-MoP17 Microstructure of BaTiO@sub3@ Films Prepared by Electrochemical Depostion on Ti-Coated Silicon Substrates C.-T. Wu, F.-H. Lu, National Chung Hsing University, Taiwan |
| DI1-MoP18 Electrical Properties of BST Thin Films on Si Substrates N.A. Suvorova, A.H. Mueller, E.A. Irene, University of North Carolina, Chapel Hill, O. Auciello, Argonne National Laboratory, J.A. Schultz, Ionwerks, Inc. |
| DI1-MoP19 Thermal Decompostion Mechanisms of (Ba,Sr)TiO@sub 3@ Film Precursors J.P. Senosiain, C.B. Musgrave, Stanford University |
| DI1-MoP20 Enhancement of Etching Characteristics of (Ba,Sr)TiO@sub 3@ Using Magnetically Enhanced Inductively Coupled CF@sub 4@/Ar Plasma D.P. Kim, C.I. Kim, Chung-Ang University, Korea, T.H. Kim, Yeojoo Institute of Technology, Korea, Y.J. Seo, Daebul University, Korea, E.H. Kim, Cheju National University, Korea, E.G. Chang, Chung-Ang University, Korea |
| DI1-MoP21 Structural and Microwave Properties of Artificial BaTiO@sub 3@/SrTiO@sub 3@ Superlattice on MgO and SrTiO@sub 3@ Substrate by Pulsed Laser Deposition J.H. Kim, L. Kim, Y.N. Kim, D. Jung, Y.S. Kim, J. Lee, Sungkyunkwan University, Korea |
| DI1-MoP22 Ferroelectric PMNT Thin Films Deposited on TiN:O@sub 2@ by Laser Ablation J.M. Siqueiros, UNAM, Mexico, A. Fundora, J. Portelles, Universidad de La Habana, Cuba |