IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI1-MoP

Paper DI1-MoP15
Annealing Effects of Al@sub 2@O@sub 3@ Films Grown on Si(100)

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: High K Dielectrics Poster Session
Presenter: Y.S. Roh, Yonsei University, Korea
Authors: Y.S. Roh, Yonsei University, Korea
M.-H. Cho, Yonsei University, Korea
Y.K. Kim, Yonsei University, Korea
S.A. Park, Yonsei University, Korea
D.-H. Ko, Yonsei University, Korea
C.N. Whang, Yonsei University, Korea
K.H. Jeoung, Yonsei University, Korea
Correspondent: Click to Email
The annealing effects of the thin Al@sub 2@O@sub 3@ films grown on Si(100) by sputtering method was deeply investigated using various physical and electrical measurement methods. All the films grown in the temperature below 300@super o@C using sputtering Al@sub 2@O@sub 3@ target showed amorphous structure as examined by x-ray diffraction and transmission electron microscopy. The amorphous structure was maintained up to 600@super o@C and then transformed to @gamma@-Al@sub 2@O@sub 3@ phase above the annealing temperature of 600@super o@C . In particular, the characteristics of the leakage current density in MOS structure depended on the annealing temperature. The densification of the film due to the crystallization resulted in improved electrical characteristics; the crystallization enhanced the improvement of the dielectricity and breakdown field strength. Moreover, the depth profiling data using XPS showed that the improvement of the leakage properties in Al@sub 2@O@sub 3@ film closely related with the change of interfacial layer under the high temperature annealing. In particular, the fixed trap density was increased even after the annealing process, which resulted from the difference of the chemical state of the Al@sub 2@O@sub 3@ film along with the structural change.