IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI1-MoP

Paper DI1-MoP22
Ferroelectric PMNT Thin Films Deposited on TiN:O@sub 2@ by Laser Ablation

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: High K Dielectrics Poster Session
Presenter: J.M. Siqueiros, UNAM, Mexico
Authors: J.M. Siqueiros, UNAM, Mexico
A. Fundora, Universidad de La Habana, Cuba
J. Portelles, Universidad de La Habana, Cuba
Correspondent: Click to Email
Pb(Mg@sub 1/3@Nb@sub 2/3@)@sub0.9@Ti@sub 0.1@O@sub 3@ (PMNT) polycrystalline thin films were deposited on TiN/Si substrates at different temperatures by laser ablation, using a wavelength of 248 nm, 30 ns pulse duration, 10 Hz repetition rate and a fluence of 2 J/cm@super 2@. As a result of this previous study, it was determined that deposits at 250 @super 0@C in a 200 mTorr oxygen atmosphere gave the best results with a post annealing treatment at 500 @super 0@C where a PMNT perovskite single phase formation was confirmed by x-ray diffraction (XRD) analysis. Higher and lower annealing temperatures presented a secondary pyrochlore phase. The electrical properties and the influence of the annealing temperature on the dielectric properties of the PMNT thin films were characterized through P-E hysteresis. Fatigue measurements were used to evaluate the long-term performance of the PMNT/TiN/Si system. The characteristics of the TiN films used as bottom electrodes were evaluated using Auger Electron Spectroscopy (AES) and Transmission Electron Microscopy (TEM) with particular emphasis in the interfaces. @footnote 1@ This work has been partially supported by CoNaCyT-Mexico, through grant No. 33586E and by DGAPA-UNAM grant No. IN104000. The technical support by I. Gradilla, E. Aparicio, V. Garcia and F. Ruiz is acknowledged.