IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI1-MoP

Paper DI1-MoP17
Microstructure of BaTiO@sub3@ Films Prepared by Electrochemical Depostion on Ti-Coated Silicon Substrates

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: High K Dielectrics Poster Session
Presenter: C.-T. Wu, National Chung Hsing University, Taiwan
Authors: C.-T. Wu, National Chung Hsing University, Taiwan
F.-H. Lu, National Chung Hsing University, Taiwan
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Crystalline BaTiO@sub3@ films were directly synthesized onto Ti-coated silicon substrates in highly alkaline condition at 55°C using Ba(OH)@sub2@ or Ba(CH@sub3@COO)@sub2@ as electrolyte. Titanium films were first deposited by Filtered Cathodic Arc Deposition (FCAD) of varying thickness about 0.2 µm, 2µm and 5µm onto silicon wafer. The electric charge of electrolysis was carefully controlled to grow appropriate thickness of BaTiO@sub3@ films by applying a anodic oxidation method. From previous studies using pure Ti plates as substrates, we prepared the films by the potentiodynamic method to the preset voltages. X-ray diffraction results showed cubic BaTiO@sub3@ phase could be present at low electrolytic voltage of 3 V and higher voltage of 75 V. The BaTiO@sub3@ films synthesized at 3 V develops uniformly distributed spherical like small particles, and crater-shaped and large-grained BaTiO@sub 3@ films were observed at 75 V. The great differences of morphology between these two electrolytic conditions were also verified by surface roughness measurements. SEM/EDS, AES and XPS were used to analyze the composition of BaTiO@sub3@ films. The growth mechanisms of BaTiO@sub3@ films were also discussed.