IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI1-MoP

Paper DI1-MoP13
High-dielectric Constant Aluminum Oxide Films

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: High K Dielectrics Poster Session
Presenter: C. Falcony, CINVESTAV and ESFM-IPN, Mexico
Authors: C. Falcony, CINVESTAV and ESFM-IPN, Mexico
M. Aguilar-Frutis, CICATA-IPN, Mexico
J. Guzman, CICATA-IPN, IIM-UNAM, Mexico
M. Garcia, IIM-UNAM, Mexico
Correspondent: Click to Email
Aluminum oxide films deposited by Spray Pyrolysis at low temperatures ( 450 to 650°C ) have been studied as high-K dielectric layers on silicon. Dielectric constants in the range of 6.7 to 8.5 and interface states in the order of 10@super 11@ at midgap have been obtained. Overall optical, electrical, and structural characteristics are strongly dependent on the deposition parameters, as well as the presence of carbon as impurity. Dielectric breakdown for these films is larger than 5 MV/cm.The electrical conduction mechanisms are discussed.