IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI1-MoP

Paper DI1-MoP1
Generation and Relaxation of Positive Charge in Gate Dielectric of MOS Structures at High-fields

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: High K Dielectrics Poster Session
Presenter: G.G. Bondarenko, Moscow Institute of Electronics and Mathematics, Russia
Authors: G.G. Bondarenko, Moscow Institute of Electronics and Mathematics, Russia
V.V. Andreev, Bauman Moscow State Technical University, Russia
A.A. Stolyarov, Bauman Moscow State Technical University, Russia
Correspondent: Click to Email
In this work the new technique of investigation of generation and relaxation processes in gate dielectric of MOS structures during and after high-field stress is proposed. The technique is based on the controlling of current stress, applied to the sample, and simultaneous voltage measurement on it. The technique proposed allows carrying out the controlled electron injection into gate dielectric at high-fields, realizing the simultaneous monitoring of MOS structures charge state change both under the present field and under lower fields, that gives possibility to obtain new quality information about charge generation processes in dielectric layers. The technique allows, right after high-field injection without sample re-switching, to monitor the relaxation processes of charges generated by injected electrons in gate dielectric of MOS structures in wide range of electric fields, from the injection field to the structure short circuit. Using the technique proposed the investigation of positive charge generation and relaxation phenomena in silicon MOS structures with thermal SiO@sub 2@ film had been carried out. It was shown that under high injection current densities, the positive charge value monitoring by voltage shift on MOS structure can lead to significant error, to decrease which it is necessary to measure the positive charge value using voltage shift under less current densities. It was found out that the relaxation time of positive charge, generated by tunnel Fowler-Nordheim electron injection from silicon in thermal SiO@sub 2@ film, has field dependence, decreasing with external electric field rise.