IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI1-MoP

Paper DI1-MoP14
UHV-CVD of Al@sub 2@O@sub 3@ for Gate Dielectric Applications

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: High K Dielectrics Poster Session
Presenter: Z. Song, Vanderbilt University
Authors: B.R. Rogers, Vanderbilt University
Z. Song, Vanderbilt University
R.D. Geil, Vanderbilt University
T.P. Hanusa, Vanderbilt University
R.A. Weller, Vanderbilt University
Correspondent: Click to Email
Successful replacement of silicon dioxide-based MOSFET gate dielectrics by a high-permittivity (high-k) dielectric is a critical step in the continued drive to build the smaller, faster, lower-power, more-integrated circuits that society is demanding. Our goal toward this effort is to develop a thermodynamically and microstructurally stable, amorphous material system, having no interfacial silicon dioxide formation. In this presentation we will discuss our work on developing alumina/zirconia alloys for use as gate dielectrics. We have begun this effort by studying the deposition of alumina films in an ultra-high-vacuum chemical vapor deposition (UHV-CVD) system. We use a precursor of a mixed alkyl alkoxide aluminum dimer. This compound contains triethyl (tri-sec-butoxy) dialuminum, tetraethyl (di-sec-butoxy) dialuminum, and diethyl (tetra-sec-butoxy) dialuminum. This mixture is non-pyrophoric and is less susceptible to hydrolysis than other tialkoxide aluminums. Our studies have included total deposition pressures between 10@sup -5@ and 10@sup -3@ torr, and substrate temperatures between 350 and 500 °C. In addition we will discuss the characterization of these films using time-of-flight medium energy ion scattering (ToF-MEIS), a characterization capability unique to Vanderbilt University. . @FootnoteText@ This work is supported by the National Science Foundation grant # CTS-0092792.