IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI1-MoP

Paper DI1-MoP11
Characteristics of Zirconium Oxide with Different Gate Electrodes

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: High K Dielectrics Poster Session
Presenter: S.-W. Nam, Yonsei University, Korea
Authors: S.-W. Nam, Yonsei University, Korea
J.-H. Yoo, Yonsei University, Korea
D.W. Lee, Yonsei University, Korea
D.-H. Ko, Yonsei University, Korea
J.-H. Ku, Samsung Electronics Co., Korea
M.-H. Cho, Yonsei University, Korea
S. Choi, Samsung Electronics Co., Korea
C.-W. Yang, Sungkyunkwan University, Korea
Correspondent: Click to Email
MOS devices are being continuously scaled, especially the gate oxide thickness and the source/drain junction depth. Key process issues in conventional SiO@sub 2@ scaling are with the gate stack, including boron penetration and gate leakage for very thin gate oxides and depletion effects in the polysilicon electrodes. The solution is to use a gate dielectric with a higher dielectric constant than that of SiO@sub 2@. Together with a high-K dielectric, dual metal gate may be implemented to enable the scaling of MOS devices. We investigated the electrical properties and thermal stability on sputtered ZrO@sub 2@ films with various electrodes for p-type silicon substrate. ZrO@sub 2@ thin films as a gate dielectric were deposited by reactive dc magnetron sputtering, followed by thermal annealing in either O@sub 2@ or N@sub 2@ using furnace. And then various metals such as Al, Pt, TiN, TiN/Al, and TiN/Pt were deposited by sputtering as a gate electrode. Also, conventional poly-Si and poly-SiGe as a gate electrode were deposited by chemical vapor deposition. By HRTEM and XPS analyses, we evaluated compatibility and thermal stability between the ZrO@sub 2@ films and electrodes. We focused on the interfacial layer between high-k dielectric and electrodes. In comparison with Pt electrode, the accumulation capacitance of the MOS with Al electrode demonstrated about 8% degradation. And we compared electrical characteristics of Al (or TiN/Al) and Pt (or TiN/Pt) with other well-known gate electrodes such as poly-Si and poly-SiGe.