IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI1-MoP

Paper DI1-MoP18
Electrical Properties of BST Thin Films on Si Substrates

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: High K Dielectrics Poster Session
Presenter: N.A. Suvorova, University of North Carolina, Chapel Hill
Authors: N.A. Suvorova, University of North Carolina, Chapel Hill
A.H. Mueller, University of North Carolina, Chapel Hill
E.A. Irene, University of North Carolina, Chapel Hill
O. Auciello, Argonne National Laboratory
J.A. Schultz, Ionwerks, Inc.
Correspondent: Click to Email
Among many materials with high dielectric constant for use in advanced MOSFET's, Ba@sub 0.5@Sr@sub 0.5@TiO@sub 3@ (BST) is one of the most promising candidates, since it has a static dielectric constant over 300 for bulk material. However, BST thin films always exhibit much lower dielectric constant. The formation of interfacial layers between BST and Si substrate results in reduction of the overall dielectric constant that dramatically decreases the capacitance of the stack. Our BST thin films studies@footnote 1@ have included in-situ real time material characterisation as well as ex-situ material and electronic characterizations. The present study focuses on electronic characterization of Al/BST/p-Si and Ir/BST/p-Si structures with and without intervening SiO@sub 2@ layers between BST and Si substrate. Among the electronic measurements included are the dielectric constant and leakage current of the BST thin films as well as interface charges. Attepmts will be made to correlate the electronic properties with the material characteristics that will be presented separately.@footnote 1@ @FootnoteText@ @footnote 1@ A.H. Mueller, N.A. Suvorova, E.A. Irene, O. Auciello, and J.A. Schultz. In-situ, real time studies of interface formation of BST thin films on Si substrates. Present Conference Proceedings.