IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI1-MoP

Paper DI1-MoP2
Stability of Chemical Vapor Deposited Thin Films HFO@sub 2@ and HFSi@sub x@O@sub y@

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: High K Dielectrics Poster Session
Presenter: H. Bhandari, University of Alabama
Authors: H. Bhandari, University of Alabama
V. Rangarajan, University of Alabama
T.M. Klein, University of Alabama
Correspondent: Click to Email
Two desirable properties for candidate high dielectric constant materials for MOSFET gates are that the material remains amorphous and does not react with silicon substrate during post deposition anneals. Uncontrolled multiple oxide layer growth during post deposition anneals can result in a decrease in the overall capacitance while a polycrystalline or phase-separated material could have excessive current leakage along grain boundaries. Hafnium oxide and hafnium silicate are two materials, which are predicted to be thermodynamically stable with silicon at 1000°C. We have deposited these materials using organometallic chemical vapor deposition with Hf (IV) t-butoxide and various oxygen atom sources including N@sub 2@O and O@sub 2@, as well as remote N@sub 2@O and O@sub 2@ plasmas. Rapid thermal annealing experiments were performed in Ar, O@sub 2@ and N@sub 2@ ambients up to 1000°C. Thin film stability was examined using XPS, Fourier transfer infrared spectroscopy and X-ray diffraction measurements.