IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Monday Sessions
       Session DI1-MoP

Paper DI1-MoP16
Studies on Ta@sub 2@O@sub 5@ Thin Films Deposited on Si(100) by MOCVD and Sputtering Techniques

Monday, October 29, 2001, 5:30 pm, Room 134/135

Session: High K Dielectrics Poster Session
Presenter: S. Santucci, University of L'Aquila, Italy
Authors: P. Passacantando, University of L'Aquila, Italy
L. Lozzi, University of L'Aquila, Italy
V. Salerni, University of L'Aquila, Italy
P. Picozzi, University of L'Aquila, Italy
S. Santucci, University of L'Aquila, Italy
Correspondent: Click to Email
Tantalum oxide is one of the most promising dielectric materials to be used for high performance in integrated circuits and electronic packaging applications. In this work stoichiometric Ta2O5 thin films have been successfully grown on Si(100) substrate by metal-organic chemical vapor deposition (CVD) technique using tantalum ethoxide (Ta(OC2H5)5) as precursor and by DC sputtering in reactive Ar/O2 atmosphere. The growth rate, the stoichiometry, the surface morphology and the structural properties of the films growth with and without nitrogen passivation of the silicon substrate, have been studied by X-Ray Reflectivity (XRR), X-ray Photoelectron spectroscopy (XPS), Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD). We observed how the formation of a SiO2 layer between the silicon substrate and the Ta2O5 deposited film is nearly totally inhibited by a pre-treatment at 750°C in NH3 flux of the H-terminated silicon surface before the Ta2O5 deposition. Furthermore, we observed that a post growth annealing in a O2/N2 mixture up to 850°C determines a lowering of the leakage current whose dominating mechanism has been attributed to trap assisted Frenkel-Poole emission.