AVS 63rd International Symposium & Exhibition | |
Thin Film | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
TF-ThP2 Interfaces in Hybrid Structures: A 'non'-Destructive, In Situ Insight in Bonds and Failure Tom Hauffman, S. Pletincx, K. Marcoen, Vrije Universiteit Brussel, Belgium, P. Kerger, Max Planck Institut fur Eisenforschung GmbH (Düsseldorf- Germany), Germany, L.I. Fockaert, Technical University of Delft, Netherlands, M. Rohwerder, Max Planck Institut fur Eisenforschung GmbH (Düsseldorf- Germany), Germany, J.M.C. Mol, Technical University of Delft, Netherlands, H. Terryn, Vrije Universiteit Brussel, Belgium |
TF-ThP5 Valence Band Investigation of Cu(In,Ga)Se2 Semiconductor: Improvements by Ag Alloying Kevin Jones, R.L. Opila, F. Fang, University of Delaware, L. Chen, W. Shafaraman, University of Delaware and Institute of Energy Conversion at University of Delaware |
TF-ThP7 Internal Charge Transfer at the MBE-Grown Complex Oxide Interface Peng Xu, University of Minnesota, T.C. Droubay, Pacific Northwest National Laboratory, J.S. Jeong, K.A. Mkhoyan, University of Minnesota, P.V. Sushko, S.A. Chambers, Pacific Northwest National Laboratory, B. Jalan, University of Minnesota |
TF-ThP9 Preparation of a Transparent Conductive Multilayer Consists of MoO3/Ag/MoO3 and its Application in OLEDs Midori Kawamura, T. Chiba, T. Kiba, Y. Abe, K.H. Kim, Kitami Institute of Technology, Japan |
TF-ThP11 X-Ray Analysis of Metamorphic InxGa1-xAs/InyGa1-yAs Superlattices on GaAs (001) Substrates Fahad Althowibi, J.E. Ayers, University of Connecticut |
TF-ThP12 Synthesis of Novel Ta Precursor and its Application in Atomic Layer Deposition of TaN Film J.H. Han, Korea Research Institute of Chemical Technology, Republic of Korea, S.C. Lee, H.Y. Kim, T.M. Chung, Korea Research Institute of Chemical Technology, ChangGyun Kim, Korea Research Institute of Chemical Technology, Republic of Korea |
TF-ThP13 Transmission of Plasma-Generated Free Radicals through Silicon Nitride Dielectric Films F.A. Choudhury, G. Sabat, M. Sussman, University of Wisconsin-Madison, Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
TF-ThP16 PEALD BSG PSG Doping Diffusion Characterization Jeff Shu, Y. Zhang, H. Sheng, J. Liu, GLOBALFOUNDRIES U.S. Inc. |
TF-ThP17 Low Temperature Deposition of nc-Silicon Thin Films using SiH4/H2 mixture Moniruzzaman Syed, Lemoyne Owen College, Tong. Goh, University of Malaya, Malaysia, N.F.F.B. Nazarudin, University of Malaya, Kuala Lumpur, A. Jahangir, University of Memphis, Y. Hamada, Lemoyne Owen College, A.M. Ali, King Khalid University, Saudi Arabia |
TF-ThP19 Low Energy Ion Scattering (LEIS) Analysis of ALD Deposited GaSb Films on SiO2 Thomas Grehl, P. Brüner, ION-TOF GmbH, Germany, R. ter Veen, M. Fartmann, Tascon GmbH, Germany, T. Blomberg, M. Tuominen, ASM Microchemistry Ltd., Finland |
TF-ThP21 Characterization and Use of Porous Materials for Solid Phase Microextraction by Sputtering and CVD Massoud Kaykhaii, T. Roychowdhury, A. Diwan, B. Singh, M.R. Linford, Brigham Young University |
TF-ThP22 Simulation and Characterization of Short Channel Organic Thin Film Transistors Fabricated Using Ink-jet Printing and Imprint Process Juhyun Bae, Sungkyunkwan University, Republic of Korea, K.H. Kim, N.Y. Kwon, Samsung Electronics Co., LTD., South Korea, I.S. Chung, Sungkyunkwan University, Republic of Korea |
TF-ThP24 Toward Reliable Production of Well-Structured, Self-Assembled Thin Films of Quantum Dots for Surface Coatings Cuong Nguyen, J.J. Weimer, The University of Alabama in Huntsville |
TF-ThP25 IN SITU Spectroscopic Analysis of Perovskite/Graphene Hybrid Films for Graphene-Based Perovskite Solar Cells Seth B. Darling, Argonne National Laboratory, University of Chicago, M.A. Acik, Argonne National Laboratory |
TF-ThP26 Synergetic Effect of Nitrogen and Fluorine on the Total Dose Radiation Hardness of the Buried Oxide Layer in SOI Wafers Zhongshan Zheng, Institute of Microelectronics of Chinese Academy of Sciences, China |
TF-ThP27 The Effect of Vacuum Ultraviolet Irradiation on the Dielectric Constant, Leakage Currents and Time-Dependent Dielectric Breakdown of Low-k Dielectric Films Dongfei Pei, W. Li, P. Xue, University of Wisconsin-Madison, S.W. King, Intel Corp, Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
TF-ThP28 Fabrication of and Photovoltaic Characterization of SnS Solar Cell YoungKuk Lee, S.G. Kang, C.G. Kim, Korea Research Institute of Chemical Technology, Republic of Korea |
TF-ThP29 Solution Deposition of Pentacene Thin Films for Solar Cells and Organic Electronics Michael Lee, R. Mendoza, R.T. Rodriguez, B.F. Kunzler, Northern Arizona University |
TF-ThP30 Protected Aluminum Mirrors in the DUV Spectral Range for Astronomical applications Hung-Pin Chen, W.H. Cho, C.-N. Hsiao, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan, Republic of China, C.C. Lee, National Central University, Taiwan, Republic of China |
TF-ThP31 Physical Characteristics of TiOx Thin Films Obtained by DC Reactive Sputtering Victor Lima, I. Doi, J.A. Diniz, R.R. César, State University of Campinas, Brazil |
TF-ThP32 Modification of the Vacuum-ultraviolet Absorption Spectrum during Plasma Exposure of Low-k Dielectrics: A Time-dependent Density Functional Theory Analysis Ha Nguyen, F.A. Choudhury, J.L. Shohet, University of Wisconsin - Madison |
TF-ThP33 High Moisture-Barrier Films using Roll-to-Roll-Plasma CVD grown SiOx on Room-Temperature ALD treated PEN Substrates Nobuyuki Kawakami, N. Jiko, T. Okimoto, Kobe Steel, Ltd., Japan, K. Kanomata, F. Hirose, Yamagata University, Japan |
TF-ThP34 Determination of the Characteristic Times of Surface Coverage of HfO2 in Si Substrates by ALD Pierre Giovanni Mani-Gonzalez, UACJ, Mexico, M.M.M. Contreras-Turrubiartes, UASLP, Mexico, P.E. Garcia-Casillas, H. Leos-Mendez, UACJ, Mexico, H. Hernandez-Arriaga, UASLP, Mexico, J.A. Hernandez-Marquez, J.L. Enriquez-Carrejo, UACJ, Mexico, M. Melendez-Lira, CINVESTAV-IPN, Mexico, E. Lopez-Luna, UASLP, Mexico |
TF-ThP37 Linear Scanning Magnetron for Solar Cell PVD Applications Vladimir Kudriavtsev, A. Riposan, L. Mandrell, C.W. Smith, T.M. Bluck, Intevac |
TF-ThP39 Chemical Vapor Deposition of Manganese Nitride from bis(2,2,6,6 tetramethylpiperidido) Manganese (II), Mn(tmp)2, and Ammonia E. Mohimi, B. Trinh, Shaista Babar, G.S. Girolami, J.R. Abelson, University of Illinois at Urbana Champaign |
TF-ThP40 Effect of Substrate Temperature and Pulse Frequency on the Properties of SiC Film on Si (111) Deposited by Pulsed dc Magnetron Sputtering H.-P. Chen, C.-T. Lee, P.-K. Chiu, D. Chiang, Wei-Chun Chen, ITRC, National Applied Research Laboratories, Taiwan, Republic of China, S.-L. Ou, Da-Yeh University, Taiwan, Republic of China |
TF-ThP41 Reactive Magnetron Sputtering of Epitaxial Scandium Nitride for High Performance Electronics Amber Reed, Air Force Research Laboratory, Wright Patterson Air Force Base, D.C. Look, V. Vasilyev, Air Force Research Laboratory, Wright-Patterson Air Force Base, H.M. Jeon, H.A. Smith, M.R. Schmitt, Air Force Research Laboratory, Wright Patterson Air Force Base, J.S. Cetnar, Air Force Research Laboratory, Wright-Patterson Air Force Base, B.M. Howe, Air Force Research Laboratory, Wright Patterson Air Force Base |
TF-ThP42 Amorphous Phase Content Determination in TiO2 Thin Films on Glass Substrates using the PONKCS Approach T. Malek, Stanislav Danis, Charles University in Prague, Czech Republic, L. Matejova, Technical University of Ostrava, Czech Republic, M. Cerhova, Czech Academy of Sciences, Czech Republic |
TF-ThP43 The Atomic Layer Deposited SrTiO3Films using Thin Seed Layer and their Improvement of Dielectric Properties for DRAM Capacitor Sang Hyeon Kim, Samsung Electronics, Republic of Korea, C.S. Hwang, Seoul National University, Republic of Korea |
TF-ThP44 Water Cooled Low Temperature Evaporation (LTE) Source for Thin Film Organic Semiconducting Materials Salahud Din, Kurt J. Lesker Company, UK |
TF-ThP45 Reactive RF Magnetron Sputtering of Vanadium Oxides: Substrate Bias Issues Sergey Jr. Maklakov, V.I. Polozov, I.A. Ryzhikov, V.N. Kisel, Institute for Theoretical and Applied Electromagnetics RAS, Russian Federation |