| AVS 63rd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | ChangGyun Kim, Korea Research Institute of Chemical Technology, Republic of Korea |
| Authors: | J.H. Han, Korea Research Institute of Chemical Technology, Republic of Korea S.C. Lee, Korea Research Institute of Chemical Technology H.Y. Kim, Korea Research Institute of Chemical Technology T.M. Chung, Korea Research Institute of Chemical Technology C.G. Kim, Korea Research Institute of Chemical Technology, Republic of Korea |
| Correspondent: | Click to Email |
Tantalum nitride (TaN) film has received considerable attention for the application in the Cu diffusion barrier owing to its promising properties including high electrical conductivity, high chemical stability, and high resistivity against Cu diffusion [1,2]. Although physical vapor deposition method such as sputtering is being mainly used for TaN coating in semiconductor industry, the use of atomic layer deposition (ALD) is expected to be essential to fabricate highly scaled semiconductor devices. A variety of Ta precursors have been reported for TaN ALD films. Although tantalum halides such as TaCl5, TaF5 and TaI5 were most widely performed with NH3 and tBuNH2, the halide precursors are solid with relatively low vapor pressure [3]. In addition, ALD with halide sources resulted in formation of corrosive by-products and required relatively high growth temperature to obtain pure TaN film.
We successfully synthesized novel Ta precursor which is thermally stable and volatile liquid at room temperature. Thermal decomposition test for novel Ta precursor revealed that it starts to decompose approximately at 350 oC. Self-limiting growth of TaN ALD film was observed with co-reactant either NH3 or NH3 plasma at the temperatures of 150-300 oC. Deposition rate of TaN using NH3 plasma at 200 oC is 0.06 nm/cycle, and AES depth profile showed that PEALD TaN film contains carbon and oxygen levels below 5 %. In this presentation, chemical/physical characteristics and Cu diffusion barrier property of TaN film will be covered.
Figure. AES depth profile of PEALD TaN film grown at 200 oC
[1] T. Chakraborty and E. T. Eisenbraun, J. Vac. Sci. Technol. A 30, 020604 (2012).
[2] H. Kim, C. Detavenier, O. van der Straten, S. M. Rossnagel, A. J. Kellock and D.-G. Park, J. Appl. Phys. 98, 014308 (2005).
[3] J.-D. Kwon, J. Yun, and S.-W. Kang, Jpn. J. Appl. Phys., 8, 025504 (2009).