| AVS 63rd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Fahad Althowibi, University of Connecticut |
| Authors: | F. Althowibi, University of Connecticut J.E. Ayers, University of Connecticut |
| Correspondent: | Click to Email |
Strained-layer superlattices have been used in metamorphic device structures for the control of the threading dislocation density. If placed below a graded layer, the superlattice can modify the misfit dislocation length, and if placed above a metamorphic buffer, the superlattice can promote annihilation and coalescence reactions between threading dislocations. In either application, the superlattice is metamorphic, or partly lattice relaxed, and it is of interest to be able to determine the threading dislocation density within the superlattice by means of non-destructive characterization. In this paper we report a study of the dynamical x-ray diffraction from InxGa1-xAs/InyGa1-yAs superlattices grown epitaxially on GaAs (001) substrates. We show that the threading dislocation density in the superlattice may be estimated from non-destructive x-ray rocking curve measurements. This approach may also be extended to complex device structures containing metamorphic superlattices.