| AVS 63rd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Pierre Giovanni Mani-Gonzalez, UACJ, Mexico |
| Authors: | P.G. Mani-Gonzalez, UACJ, Mexico M.M.M. Contreras-Turrubiartes, UASLP, Mexico P.E. Garcia-Casillas, UACJ, Mexico H. Leos-Mendez, UACJ, Mexico H. Hernandez-Arriaga, UASLP, Mexico J.A. Hernandez-Marquez, UACJ, Mexico J.L. Enriquez-Carrejo, UACJ, Mexico M. Melendez-Lira, CINVESTAV-IPN, Mexico E. Lopez-Luna, UASLP, Mexico |
| Correspondent: | Click to Email |
Actually atomic layer deposition has been used for electronic devices ensemble. The high quality at the interface allows the use of this technique as a deposition method. But when growing any material it is important to think in three important points: the aperture-times of each precursor, the number of ALD cycles and the time of surface saturation. The present work shows the process of surface saturation as function of pressure and physical models. This way of obtaining films is innovative because it has not been considered in every ALD equipment. Also, increasing the superficial area, stoichiometric control and thickness. Those features can be controlled using variables such temperature. In previous research it was found that an interface is formed and some defects in film when it is grown by ALD. Those works do not consider this proposed model.