| AVS 63rd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Wei-Chun Chen, ITRC, National Applied Research Laboratories, Taiwan, Republic of China |
| Authors: | H.-P. Chen, ITRC, National Applied Research Laboratories, Taiwan, Republic of China C.-T. Lee, ITRC, National Applied Research Laboratories, Taiwan, Republic of China P.-K. Chiu, ITRC, National Applied Research Laboratories, Taiwan, Republic of China D. Chiang, ITRC, National Applied Research Laboratories, Taiwan, Republic of China W.-C. Chen, ITRC, National Applied Research Laboratories, Taiwan, Republic of China S.-L. Ou, Da-Yeh University, Taiwan, Republic of China |
| Correspondent: | Click to Email |
In this work, the SiC thin film was deposited on Si(111) substrate by a pulsed dc magnetron sputtering deposition for developing the suitable buffer-layer between GaN film and Si substrate. The SiC thin film was prepared from a high purity (99.999%) SiC target and deposited on Si(111) at conditions with various substrate temperatures (600~900 ℃) and pulse frequencies (10~100 kHz) by a pulsed-dc magnetron sputtering. Effects of process parameters on the film composition, microstructure, surface roughness, and electrical properties were investigated by field emission scanning electron microscopy with energy dispersive X-ray spectroscopy (FESEM-EDX), X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), Raman spectrometer, and Hall-effect measurement, respectively. The research goal is to obtain preferred orientation along SiC (111) and root-mean-square surface roughness below 0.5 nm. It is expected that the high quality GaN layer can be epitaxial grown on Si substrate with SiC interface layer.