Paper TF-ThP26
Synergetic Effect of Nitrogen and Fluorine on the Total Dose Radiation Hardness of the Buried Oxide Layer in SOI Wafers

Thursday, November 10, 2016, 6:00 pm, Room Hall D

In order to improve the total dose radiation hardness of the buried oxide layer in silicon-on-insulator (SOI) wafers, the buried oxide was modified by a combined implantation of nitrogen and fluorine ions and subsequent anneal processing. The samples were irradiated using Co-60 gamma rays with various doses, and the radiation responses of the buried oxide layers were characterized using the capacitance-voltage (C-V) technique. The experimental results show the considerably increased radiation hardness of the modified buried oxide layers which received a proper post-implantation annealing with the nitrogen- and fluorine-related electron traps introduced. It is also found that the anneal time is a very important variable affecting the radiation hardness for the modified buried oxide layers, and the depth profiles of nitrogen and fluorine in the buried oxide, which are obtained by secondary ion mass spectrometry (SIMS) analysis, each are nearly identical for all the implanted wafers although there are the obvious differences in the buried oxide radiation hardness between the different samples. Additionally, the rebound and fluctuation phenomena of the buried oxide radiation responses have been observed, which can be attributed to the charge trapping and de-trapping in the buried oxide due to irradiation.