| AVS 63rd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Moniruzzaman Syed, Lemoyne Owen College |
| Authors: | M. Syed, Lemoyne Owen College Tong. Goh, University of Malaya, Malaysia N.F.F.B. Nazarudin, University of Malaya, Kuala Lumpur A. Jahangir, University of Memphis Y. Hamada, Lemoyne Owen College A.M. Ali, King Khalid University, Saudi Arabia |
| Correspondent: | Click to Email |
Nanocrystalline-silicon (nc-Si) films were simultaneously deposited on glass and single-crystal Si substrates that were exposed to H2 plasma excited using RF power = 80 W prior to the film deposition, under 250oC by plasma enhanced chemical vapor deposition using a SiH4/H2 mixture. Structural changes of the nc-Si films were investigated by X-ray diffraction, Raman spectroscopy, infrared absorption, UV-VIS and AFM measurements. All nc-Si films were deposited as a function of RF power conditions. <110> preferentially oriented nc-Si films were observed to grow suddenly with RF power of 80 W resulted in improved crystalline qualities. These results were examined on the basis of the effect of various mechanisms on the crystalline properties, although these mechanisms may jointly determine the properties.
KEYWORDS: polycrystalline Si, plasma-enhanced chemical vapor deposition, surface morphology of substrates, growth mechanism, crystalline qualities