| AVS 63rd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Peng Xu, University of Minnesota |
| Authors: | P. Xu, University of Minnesota T.C. Droubay, Pacific Northwest National Laboratory J.S. Jeong, University of Minnesota K.A. Mkhoyan, University of Minnesota P.V. Sushko, Pacific Northwest National Laboratory S.A. Chambers, Pacific Northwest National Laboratory B. Jalan, University of Minnesota |
| Correspondent: | Click to Email |
Two-dimensional (2D) ultra-high carrier densities are of significant interest for novel plasmonic and high charge-gain devices. The highest 2D electron density obtained is thus far limited to 3×1014 cm-2 (½ electron/unit cell/interface) at GdTiO3/SrTiO3 interfaces, and is typically an order of magnitude lower at LaAlO3/SrTiO3 interfaces. In this work, we will present detailed study from experiments and modeling to show that carrier densities much higher than 3×1014 cm-2/interface can be achieved via band engineering at MBE-grown NdTiO3/SrTiO3 interfaces. The SrTiO3 (8 u.c.)/ NdTiO3 (2 u.c) /SrTiO3 (8 u.c.) /LSAT(001) heterostructure shows the expected 0.5 electron/unit cell/interface starting at t = 2 u.c., but then exhibits a higher carrier density regime at t ≥ 6 u.c. due to additional charge transfer from broken gap band alignment between NdTiO3 and SrTiO3. The thickness dependence of electronic transport behavior will also be discussed.