| AVS 47th International Symposium | |
| Material Characterization | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| MC-TuP1 Quantitative Detection and Mapping of SiOH Groups on Si using Chemically Labeled TOF-SIMS Method T. Mitsuoka, M. Ikai, T. Ohwaki, Y. Taga, TOYOTA Central Research and Development Laboratories Inc., Japan |
| MC-TuP2 Secondary Ion Emission from Well Defined Molecular Overlayers Under Molecular Primary Ion Bombardment D. Stapel, A. Benninghoven, University of Muenster, Germany |
| MC-TuP3 A SIMS Study on the Negative Boron Cluster Secondary Ion Yield Change in Boron Implanted Silicon S. Hayashi, Nippon Steel Corporation, Japan, Y. Okamoto, SHARP Corporation, Japan, F. Toujou, Matsushita Technoresearch Inc., Japan, Y. Homma, NTT Basic Research Laboratories, Japan |
| MC-TuP4 Fabrication and Characterization of Boron-Doped Silicon Thin Film as a Reference Material for Secondary Ion Mass Spectrometry Quantification K.J. Kim, D.W. Moon, H.K. Kim, C.J. Park, Korea Research Institute of Standards and Science |
| MC-TuP5 Development of Secondary Ion Mass Spectrometry Methodology for the Film Thickness Measurement of Sub-2nm SiO@sub 2@ Interlayers C.M. Jones, J. Zhao, Advanced Micro Devices |
| MC-TuP6 Analysis of Delta Multilayer Profiles Measured by Secondary Ion Mass Spectrometry A. Takano, Y. Higashi, NTT Advance Technology Corporation, Japan, Y. Homma, NTT Basic Research Laboratories, Japan, J. Kikuma, S. Soga, Y. Okamoto, R. Oishi, S. Hayashi, R. Saito, M. Tomita, Y. Ueki, S. Seo, F. Toujou, S. Yoshikawa, J. Kinoshita, SIMS-Depth Profiling WG, Japan, D.W. Moon, Korea Research Institute of Standards and Science, Korea |
| MC-TuP7 Comparison of Improved Spreading Resistance Profiling and Secondary Ion Mass Spectrometry in the Characterization of Ion Implanted Dopant Profiles L.C.P. Tan, L.S. Tan, M.S. Leong, The National University of Singapore, C.W. Lee, ST Microelectronics Ltd. |
| MC-TuP8 Characterization of Si Distribution at the Tungsten / Titanium Nitride Interface Using Secondary Ion Mass Spectrometry - An Investigation of the Dynamic Response of a Chemical Vapor Deposition Chamber C.M. Jones, J. Zhao, Advanced Micro Devices |
| MC-TuP9 SIMS/XPS Depth Profiling of a Fluoride-Modified Epoxycoating W.J.H. Van Gennip, R.D. Van de Grampel, R. Van der Linde, Eindhoven University of Technology, The Netherlands, P.C. Zalm, Philips Research, The Netherlands, J.W. Niemantsverdriet, Eindhoven University of Technology, The Netherlands |
| MC-TuP10 Strategies for Reducing the Effects of Topography in Depth Profile Analysis of Polycrystalline Thin Film CdTe/CdS Photovoltaic Materials and Devices S.E. Asher, M.R. Young, H. Moutinho, T. Gessert, R.G. Dhere, P. Sheldon, National Renewable Energy Laboratory |
| MC-TuP11 Comparison of Sputter Rate and Interfacial Resolution in a Multi-instrument Surface Science Laboratory M.H. Engelhard, A.S. Lea, D.J. Gaspar, G.C. Dunham, T. Thevuthasan, D.R. Baer, Pacific Northwest National Laboratory |
| MC-TuP12 XPS Investigation of Counterion Exchange in SiO@sub 2@ Sol-gel Films Doped with Tris(2,2'-bipyridine)Ruthenium(II) X. Wen, M. Sykora, T.J. Meyer, R.W. Linton, University of North Carolina at Chapel Hill |
| MC-TuP13 SiO2 Growth on Si(100) and (111) Investigated by QUASES-XPS Analysis B. Semak, C. Gundlach, P. Morgen, S. Tougaard, University of Southern Denmark |
| MC-TuP14 Influence of Ar@super +@ Ion Bombardment on the Chemical States of SrBi@sub 2@Ta@sub 2@O@sub 9@ Thin Films Fabricated by Metal-Organic Decomposition Y.B. Park, K.Y. Min, S. Heo, C.H. Lim, M.K. Lee, H.J. Kim, S.Y. Lee, Hyundai Electronics Industries Co., Ltd., Korea |
| MC-TuP15 XPS Analysis of Plasma-Modified Polymers for Enhanced Cellular Response R. White, VG Scientific, UK, R.L. Williams, T. Markkula, University of Liverpool, UK, G. Jones, J. Wolstenholme, VG Scientific, UK |
| MC-TuP16 Surface Potential Measurement with High Spatial Resolution using a Scanning Auger Electron Microscope Y. Sakai, M. Kudo, JEOL Ltd., Japan, C. Nielsen, JEOL USA Inc. |
| MC-TuP17 Satellite Structure of KLL Auger Spectra in Fluorides L. Kövér, Institute of Nuclear Research of the HAS, Hungary, M. Uda, Waseda University, Japan, I. Cserny, J. Tóth, Institute of Nuclear Research of the HAS, Hungary, K. Ogasawara, H. Adachi, Kyoto University, Japan |
| MC-TuP18 XPS and XRD Characterization of CuO-TiO2-CeO2 Catalyst System M.S.P. Francisco, Universidade de Sao Paulo, Brazil, P.A.P. Nascente, Universidade Federal de Sao Carlos, Brazil, V.R. Mastelaro, Universidade de Sao Paulo, Brazil, A.O. Florentino, Universidade Estadual Paulista, Brazil |
| MC-TuP19 Structural Characterization of V@sub 2@O@sub 5@/TiO@sub 2@ Catalysts C.B. Rodella, Universidade de Sao Paulo, Brazil, P.A.P. Nascente, Universidade Federal de Sao Carlos, Brazil, V.R. Mastelaro, M.R. Zucchi, R.W. Franco, C.J. Magon, J.P. Donoso, Universidade de Sao Paulo, Brazil, A.O. Florentino, Universidade Estadual Paulista, Brazil |
| MC-TuP20 Investigation of Oxide Layers Formed on NiTi Shape Memory Alloys at Elevatated Temperatures R.G. Vitchev, G. Firstov, H. Kumar, Katholieke Universiteit Leuven, Belgium, Y. Liu, Nanyang Technological University, Singapore, B. Blanpain, J. Van Humbeeck, Katholieke Universiteit Leuven, Belgium |
| MC-TuP21 Reduction of Artifacts in Temperature Programmed Desorption Measurements of Field Generated, Real-Life, Powdered Samples V.S. Smentkowski, A.L. Linsebigler, General Electric Corporate Research and Development Center |
| MC-TuP22 A New Look at the Steel Cord-Rubber Adhesive Interphase by Chemical Depth Profiling G.E. Hammer, The Goodyear Tire & Rubber Company |
| MC-TuP23 Electrical Property of TiN@sub x@/SiO@sub 2@/Si Structure for Metal Gate Electrodes K.S. Kim, Y.C. Jang, K.J. Kim, N.-E. Lee, S. Youn, K. Roh, Y. Roh, Sungkyunkwan University, South Korea |
| MC-TuP24 The Observation of Ferroelectric Domains using Scanning Capacitance Microscope M.K. Lee, Hyundai Electronic Industries Co. Ltd., Korea, P. DeWolf, R. Alvis, Digital Instruments, Veeco Metrology Group, W.S. Yang, C.H. Lim, S. Heo, T.K. Lee, Y.B. Park, H.J. Kim, K.Y. Min, S.Y. Lee, Hyundai Electronic Industries Co. Ltd., Korea |
| MC-TuP25 Improved Local Capacitance Detection and a Quantitative 1-D Carrier Profile Extracted from the Scanning Capacitance Microscopy dC/dV versus V Curves E.-S. Kang, J. Kang, H.-J. Hwang, Chung-Ang University, Korea |
| MC-TuP26 Dynamic Force Microscopy Investigations on Molecular Structures and Electrical Properties of Organic Ultrathin Films K. Kobayashi, T. Fukuma, H. Yamada, T. Horiuchi, K. Matsushige, Kyoto University, Japan |
| MC-TuP27 Conservative and Dissipative Tip-sample Interaction Forces Reconstructed from Dynamic Atomic Force Microscopy Data B. Gotsmann, H. Fuchs, University of Muenster, Germany |
| MC-TuP28 Challenges in Insulator Surface Analysis M. Reichling, C. Barth, Universit@um a@t M@um u@nchen, Germany, M. Huisinga, R. Lindner, FU Berlin, Germany |
| MC-TuP29 Controlled Surface Charging as an Analysis Tool in XPS of Mesoscopic Systems H. Cohen, K. Shabtai, S.R. Cohen, I. Rubinstein, Weizmann Institute of Science, Israel |