AVS 47th International Symposium
    Material Characterization Tuesday Sessions
       Session MC-TuP

Paper MC-TuP1
Quantitative Detection and Mapping of SiOH Groups on Si using Chemically Labeled TOF-SIMS Method

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: T. Mitsuoka, TOYOTA Central Research and Development Laboratories Inc., Japan
Authors: T. Mitsuoka, TOYOTA Central Research and Development Laboratories Inc., Japan
M. Ikai, TOYOTA Central Research and Development Laboratories Inc., Japan
T. Ohwaki, TOYOTA Central Research and Development Laboratories Inc., Japan
Y. Taga, TOYOTA Central Research and Development Laboratories Inc., Japan
Correspondent: Click to Email
This paper first demonstrates an accurate quantitative detection and mapping of SiOH by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) combined with phenyldimethylchlorosilane (PDMCS) treatment to detect the amount of SiOH on a Si wafer. We found that we can detect the quantity of SiOH on a Si wafer without the influence of adsorbed water by the labeled TOF-SIMS method. Furthermore, we could map the 2D distribution of SiOH on the Si surface. The quantitative analysis of SiOH by TOF-SIMS was confirmed as follows. H and OH terminated surfaces were prepared by dipping a Si wafer into hydrofluoric acid (HF) solution and H@sub 2@O@sub 2@:H@sub 2@SO@sub 4@=4:1 solution, respectively. Contact angles of the SiOH surface became smaller with dipping time in deionized water. Surface chemical characteristics and adhesion force of the surfaces thus treated were examined by attenuated total refraction (ATR) of IR and Atomic Force Microscopy (AFM). The yields of characteristic ions (C@sub 6@H@sub 5@Si@super +@, C@sub 6@H@sub 5@(CH@sub 3@)@sub 2@Si@super +@)emitted from the labeled SiOH surfaces were compared with the data of contact angles, ATR and AFM. There was a good correlation between the amount of these fragment ions and contact angles. In conclusion, quantitative detection and mapping of SiOH groups on Si were demonstrated by the sophisticated labeled TOF-SIMS method.