AVS 47th International Symposium
    Material Characterization Tuesday Sessions
       Session MC-TuP

Paper MC-TuP13
SiO2 Growth on Si(100) and (111) Investigated by QUASES-XPS Analysis

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: B. Semak, University of Southern Denmark
Authors: B. Semak, University of Southern Denmark
C. Gundlach, University of Southern Denmark
P. Morgen, University of Southern Denmark
S. Tougaard, University of Southern Denmark
Correspondent: Click to Email
It is well known that the growth of SiO2 on Si is an activated process. It must involve heating and it may be strongly influenced by the presence of small amounts of catalysts like alkali metals. A fundamental problem for the growth of very thin SiO2 films with heating is the formation of oxide islands and trenches at their perimeters. The parameters of oxide growth are varied in a series of experiments to determine their influence on the morphology and interface structure of silicon oxide on Si(111) and Si(100). Here we have used the QUASES-XPS technique@footnote 1@ to analyze the surface morphologies of 0 to 10 nm thin SiO2 films. The SiO2 growth is determined for different cycles of alkali-metal evaporation-, oxygen exposure- and annealing- procedures. @FootnoteText@ @footnote 1@ http://www.quases.com.