AVS 47th International Symposium
    Material Characterization Tuesday Sessions
       Session MC-TuP

Paper MC-TuP23
Electrical Property of TiN@sub x@/SiO@sub 2@/Si Structure for Metal Gate Electrodes

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: K.S. Kim, Sungkyunkwan University, South Korea
Authors: K.S. Kim, Sungkyunkwan University, South Korea
Y.C. Jang, Sungkyunkwan University, South Korea
K.J. Kim, Sungkyunkwan University, South Korea
N.-E. Lee, Sungkyunkwan University, South Korea
S. Youn, Sungkyunkwan University, South Korea
K. Roh, Sungkyunkwan University, South Korea
Y. Roh, Sungkyunkwan University, South Korea
Correspondent: Click to Email
Recently, there have been growing research interests in the gate structures utilizing metal gate electrode materials including W in Si MOS devices. In order to avoid the strong interactions of F during W CVD with gate oxide layer leading to the destruction of gate oxide integrity, TiN@sub x@ diffusion barrier layer has been employed between the metal electrode and the gate oxide due to its excellent electrical property and structural stability. In this work, we investigated the interface formation between TiN@sub x@ and SiO@sub 2@ and electrical properties of TiN@sub x@/SiO@sub 2@ as a function of annealing temperature. Thermal gate oxide with the thickness of 110 Å was grown at 850 °C in the O@sub 2@ atmosphere by RTP on p-type Si. Then, TiN@sub x@ layers with the film thickness of 1000 Å were deposited at room-temperature by reactive d.c. magnetron sputtering with the Ar and N@sub 2@ gas mixture ratios of 6:1, 6:3, and 6:6. To minimize the radiation-induced damage of thermal gate oxide, plasma power was kept as low as 100 W during sputtering. Annealing of TiN@sub x@/SiO@sub 2@/Si structures was performed for 180 sec at 600, 700, and 800 °C by RTA in order to investigate the structural and chemical stability. AES and 4-point probe were performed to measure the chemical composition and sheet resistance (R@sub s@) of TiN@sub x@/SiO@sub 2@ films, respectively. The results of R@sub s@ measurements as a function of annealing temperature indicated that the R@sub s@ values of TiN@sub x@ films decreased at the annealing temperature below 600 °C but started to increase above 700 °C compared to those of as-deposited films. Increased R@sub s@ of the samples annealed at elevated temperature above 700 °C was attributed to the increased oxygen concentration in TiN@sub x@ layers, judged from the AES results. Microstructures of TiN@sub x@/SiO@sub 2@ interfaces investigated by cross-sectional TEM showed a good structural integrity.