AVS 47th International Symposium
    Material Characterization Tuesday Sessions
       Session MC-TuP

Paper MC-TuP4
Fabrication and Characterization of Boron-Doped Silicon Thin Film as a Reference Material for Secondary Ion Mass Spectrometry Quantification

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: K.J. Kim, Korea Research Institute of Standards and Science
Authors: K.J. Kim, Korea Research Institute of Standards and Science
D.W. Moon, Korea Research Institute of Standards and Science
H.K. Kim, Korea Research Institute of Standards and Science
C.J. Park, Korea Research Institute of Standards and Science
Correspondent: Click to Email
Secondary ion mass spectrometry(SIMS) is one of the most powerful techniques for the determination of the concentration of minor impurities in solid materials. Ion implanted reference materials are generally used for the quantification of impurities by SIMS. In this study, we will present a new type of reference material for the quantification of minor impurities by SIMS. Uniformly-doped silicon thin films with three levels of boron concentrations were fabricated by ion beam sputter deposition. A Si target with a small BN was sputter deposited simultaneously on a Si(100) and a polyester substrate by 1 keV Ar ion beam. The boron concentration was determined by inductively coupled plasma mass spectrometry (ICP-MS) using the isotope dilution method. The boron concentration measured by ICP-MS was compared with that by SIMS using a boron ion implanted standard reference material.