AVS 47th International Symposium
    Material Characterization Tuesday Sessions
       Session MC-TuP

Paper MC-TuP25
Improved Local Capacitance Detection and a Quantitative 1-D Carrier Profile Extracted from the Scanning Capacitance Microscopy dC/dV versus V Curves

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: E.-S. Kang, Chung-Ang University, Korea
Authors: E.-S. Kang, Chung-Ang University, Korea
J. Kang, Chung-Ang University, Korea
H.-J. Hwang, Chung-Ang University, Korea
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We have quantitatively extracted 1-dimensional carrier profile from the scanning capacitance microscope (SCM) dC/dV versus V curves using the SCM modeling and an inversion modeling. This is based on the spherical capacitor model, not the common parallel-plate capacitor model. We physically analyzed the spherical capacitor and calculated the rate of capacitance change with bias. Our modeling data have resulted in the capacitance-voltage (C-V) curves different from the conventional C-V curves. The method for a quantitative carrier profiling can be applied directly th the 2- or 3-dimensional dopant profile extractions. Since the current SCM system has a poor reproducibility and sensibility for obtaining the local dC/dV curves, this problem will prevent us from acquiring carrier depth information. For a better quantity of the carrier profiling, for example, to obtain a carrier profile more than 10x18 cm@super -3@, we have designed a new capacitance detector operating at 1.8GHz voltage-controlled oscillator. It consists of an vco, a microstrip resonator, and a peak detector. It will bring a greater enhancement for the SCM sensitivity and performance.