AVS 47th International Symposium
    Material Characterization Tuesday Sessions
       Session MC-TuP

Paper MC-TuP24
The Observation of Ferroelectric Domains using Scanning Capacitance Microscope

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: M.K. Lee, Hyundai Electronic Industries Co. Ltd., Korea
Authors: M.K. Lee, Hyundai Electronic Industries Co. Ltd., Korea
P. DeWolf, Digital Instruments, Veeco Metrology Group
R. Alvis, Digital Instruments, Veeco Metrology Group
W.S. Yang, Hyundai Electronic Industries Co. Ltd., Korea
C.H. Lim, Hyundai Electronic Industries Co. Ltd., Korea
S. Heo, Hyundai Electronic Industries Co. Ltd., Korea
T.K. Lee, Hyundai Electronic Industries Co. Ltd., Korea
Y.B. Park, Hyundai Electronic Industries Co. Ltd., Korea
H.J. Kim, Hyundai Electronic Industries Co. Ltd., Korea
K.Y. Min, Hyundai Electronic Industries Co. Ltd., Korea
S.Y. Lee, Hyundai Electronic Industries Co. Ltd., Korea
Correspondent: Click to Email
The ferroelectric domain structure affects the ferroelectric properties like as hysteresis loop characteristic that is of importance in manufacturing of ferroelectric random access memory (FeRAM). However, the domain images cannot be easily seen using a general analytic method. We have investigated the ferroelectric domain structure of SrBi@sub 2@Ta@sub 2@O@sub 9@ (SBT) using a scanning capacitance microscope (SCM) combined with an atomic force microscope (AFM). The ferroelectric domains were imaged by optimizing AC and DC bias between sample and cantilever tip. Integrating a dc/dv signal from single domain makes a microscopic ferroelectric hysteresis loop that corresponds well with a macroscopic one obtained from the same film. We also try to image the leakage current of SBT film by means of tunneling AFM (TunA). As the result, the weak point passing by the high currents was observed. Further study on the chemical composition or the structure of the weak point will be helpful to understand the leakage current mechanism of ferroelectric materials.