AVS 47th International Symposium
    Material Characterization Tuesday Sessions
       Session MC-TuP

Paper MC-TuP14
Influence of Ar@super +@ Ion Bombardment on the Chemical States of SrBi@sub 2@Ta@sub 2@O@sub 9@ Thin Films Fabricated by Metal-Organic Decomposition

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: Y.B. Park, Hyundai Electronics Industries Co., Ltd., Korea
Authors: Y.B. Park, Hyundai Electronics Industries Co., Ltd., Korea
K.Y. Min, Hyundai Electronics Industries Co., Ltd., Korea
S. Heo, Hyundai Electronics Industries Co., Ltd., Korea
C.H. Lim, Hyundai Electronics Industries Co., Ltd., Korea
M.K. Lee, Hyundai Electronics Industries Co., Ltd., Korea
H.J. Kim, Hyundai Electronics Industries Co., Ltd., Korea
S.Y. Lee, Hyundai Electronics Industries Co., Ltd., Korea
Correspondent: Click to Email
SrBi@sub 2@Ta@sub 2@O@sub 9@(SBT) belongs to a Bi-layered perovskite structure where double Ta-O octahedron layers are sandwiched between (Bi@sub 2@O@sub 2@)@super 2+@ layers were analyzed for the characterization of chemical states with the help of x-ray photoelectron spectroscopy (XPS) during the depth profiling analysis. When the sputter etching was performed to SBT films by Ar@super +@ ion bombardment, the chemical states of constituents were changed as a function of the applied Ar@super +@ ion beams energy from 1kV to 4kV. Among the constituents of SBT film, the Sr 3d peak was slightly changed by the change of Ar@super +@ ion beams energy. On the other hand, the change of Ta 4f and Bi 4f peak were obviously dependent on the applied Ar@super +@ ion beams energy. In particular, Bi 4f peak was dramatically changed from Bi@sub x@O@sub y@ oxide states to Bi metallic states by the lower Ar@super +@ ion energy than the cases of Sr and Ta. These changes of chemical state within SBT film resulted from the preferential sputtering of oxygen atoms. Following out present study, Preferential sputtering of oxygen atoms was found to depend on thermal stability and mass difference between oxygen and each constituent within SBT film.