AVS 47th International Symposium
    Material Characterization Tuesday Sessions
       Session MC-TuP

Paper MC-TuP3
A SIMS Study on the Negative Boron Cluster Secondary Ion Yield Change in Boron Implanted Silicon

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: S. Hayashi, Nippon Steel Corporation, Japan
Authors: S. Hayashi, Nippon Steel Corporation, Japan
Y. Okamoto, SHARP Corporation, Japan
F. Toujou, Matsushita Technoresearch Inc., Japan
Y. Homma, NTT Basic Research Laboratories, Japan
Correspondent: Click to Email
To establish standard protocols in depth profiling, the linearity of the ion intensity using the ion-implanted silicon specimens with a variety of ion dose have been investigated. In these round-robin test, we have been studying secondary ion emission mechanism and found the irregularity of the production of negative boron cluster in boron implanted silicon specimens. These phenomena have been reported only the positive secondary ion emission in the high dose specimen.@footnote 1@ In this study we applied the boron implanted silicon wafer to quantify the amounts of boron in silicon with a wide concentration range. Cs@super +@ ion beam was used to detect negatively charged boron cluster ion signals, ie, B@super -@, B@sub 2@@super -@, B@sub 3@@super -@ ,etc.. The dependency of negative secondary ion yields on a variety of ion doses was estimated in order to compare with the detection of boron cluster ion counts. The higher dose of boron was implanted into silicon, the larger production efficiency of boron cluster ion was. Especially, the efficiency of B@sub 2@@super -@ exceeded the one of boron atomic ion in the high dose, 1x10@super 17@ions/cm@super 2@ specimen which was implanted B@super +@ with 50keV as an accelerating voltage. Such an enhancement of negative dimer ion emission yield cannot be explained on the basis of the recombination mechanism because B@sub 2@@super -@ yield is larger than the B@super -@ ion yield. The emission mechanism of boron negative cluster ion will be discussed, comparing with the dependence of the boron negative cluster ion yields on the implanted doses, the shape of the implanted depth profile, and boron positive secondary ion emission. @FootnoteText@ @footnote 1@M. Tomita, F. Takahashi and Y. Homma, Nucl. Instrum. Methods Phys. Res., B85(1994), 399.