| AVS 49th International Symposium | |
| Thin Films | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| TF-TuP1 Origin of Crystalline Quality Deterioration in Epitaxial Growth of CeO@sub 2@ Layers on Si Substrates T. Inoue, S. Shida, H. Takakura, K. Takahashi, A. Horikawa, N. Sakamoto, M. Ohashi, Iwaki Meisei University, Japan |
| TF-TuP2 Structural and Electrical Characteristics of ZrO@sub 2@ as a Gate Dielectric and Buffer Layer Grown by RF Magnetron Sputtering G.S. Lim, H.S. Choi, J.H. Lee, Korea University, Y.T. Kim, S.I. Kim, Korea Institute of Science and Technology, I.H. Choi, Korea University |
| TF-TuP3 Structural Dependence of Magneto-optical and Optical Properties of Mn-Fe Alloys Films J.B. Kim, Hanyang University, Korea, Y.V. Kudryavtsev, Institute of Metal Physics, Ukraine, R. Gontarz, Hanyang University, Korea, J.Y. Rhee, Hoseo University, Korea, Y.P. Lee, Hanyang University, Korea |
| TF-TuP4 Effects of Deposition Parameters and Physical Properties of Thin Films on Gas Sensing Characteristics I. Hotovy, Slovak University of Technology Bratislava, Slovakia, J. Huran, Slovak Academy of Sciences Bratislava, Slovakia, J. Liday, Slovak University of Technology Bratislava, Slovakia, L. Spiess, Technical University of Ilmenau, Germany, P. Siciliano, IME-CNR Lecce, Italy |
| TF-TuP5 Control of Epitaxial Film Growth of CuO and Cu@sub 2@O by Reactive-dc Magnetron Sputtering on Cu Target Kept in UHV Prior to Each Sputtering I. Takahiro, M. Kunisuke, Yokohama City University, Japan |
| TF-TuP6 Preparation of Fe and Fe-N Thin Films using RF Magnetron Sputtering with Multipolar Magnetic Plasma Confinement K. Kawai, H. Harada, K. Kawabata, Hiroshima Institute of Technology, Japan |
| TF-TuP7 Mass and Optical Spectroscopy during Super-high Rate Ni Deposition by an rf-dc Coupled Magnetron Sputtering System with Multipolar Magnetic Plasma Confinement M. Ohnishi, K. Kumabuchi, Y. Yamagata, K. Kawabata, Hiroshima Institute of Technology, Japan, H. Kajioka, Industrial Research Institute Hiroshima Prefecture West, Japan |
| TF-TuP8 Large Remanent Polarization of Cerium-modified Bismuth Titanate Thin Films for Nonvolatile Ferroelectric Random Access Memory K.T. Kim, C.I. Kim, D.H. Kang, I.W. Shim, Chung-Ang University, Korea |
| TF-TuP9 Analysis of Stresses in Ru Thin Films Deposited by MOCVD H.J. Lim, S.Y. Kang, C.S. Hwang, H.J. Kim, Seoul National University, Korea |
| TF-TuP10 Phase Changes of Chromium Nitride Films Annealed in Vacuum H.-Y. Chen, F.-H. Lu, National Chung Hsing University, Taiwan |
| TF-TuP11 Effect of Graphite Content on Carbon Nitride Films Prepared by Hot Carbon Filament CVD S. Aizawa, M. Aono, N. Kitazawa, Y. Watanabe, National Defense Academy, Japan, O. Shimizu, Y. Suda, Mitsubishi Pencil Co. Ltd., Japan |
| TF-TuP13 Influence of Nitrogen Concentration on Conductivity of N-doped a-SiC:H Films Deposited by PE CVD J. Huran, Slovak Academy of Sciences Bratislava, Slovakia, I. Hotovy, J. Liday, Slovak University of Technology Bratislava, Slovakia |
| TF-TuP14 Nitride -based Tipless Cold Cathodes for Microdevice Applications N. Badi, K. He, N. Medelci, A. Bensaoula, University of Houston |
| TF-TuP15 Electrical and Optical Properties of a-C:H:Si Films Deposited by r.f. Plasma Chemical Vapor Deposition I.J. Kim, Y.T. Kim, W.S. Choi, D.H. Yoon, B. Hong, Sungkyunkwan University, Korea |
| TF-TuP16 Pulsed Laser Deposited Zn@sub 2@GeO@sub 4@: Mn Thin Films for Field Emission Displays L.C. Williams, D.P. Norton, P.H. Holloway, University of Florida |
| TF-TuP17 Study of GaPN Epilayers Grown by Molecular Beam Epitaxy M.A. Santana-Aranda, CINVESTAV-IPN, Mexico, C. Mejía-García, IPN, Mexico, M. Meléndez-Lira, CINVESTAV-IPN, Mexico, G. Contreras-Puente, IPN, Mexico, M. López-López, CINVESTAV-IPN, Mexico, K. Momose, A. Utsumi, H. Yonezu, Y. Furukawa, Toyohashi University of Technology, Japan |
| TF-TuP18 Ultraviolet Emitting SrS:Te Thin Films P.D. Rack, University of Tennessee, J.M. Fitz-Gerald, University of Virginia |
| TF-TuP19 Growth and Characterization of Single Crystal Multi Layer Nano Structures for Fast Ion Conduction S. Azad, S. Thevuthasan, V. Shutthanandan, C.M. Wang, D.E. McCready, J.W. Stevenson, S. Baskaran, C.H.F. Peden, Pacific Northwest National Laboratory |
| TF-TuP20 Molecular Beam Deposition of Yttrium Oxide as a Host Material of Er Doping for an Optoelectronic Amplifier Application B. Cho, T. Van, J.P. Chang, University of California, Los Angeles |
| TF-TuP21 Infrared Emission from Electroluminescent Thin Film ZnS Doped with Rare Earth Fluorides W. Glass, A.S. Kale, M. Davidson, P.H. Holloway, University of Florida |
| TF-TuP22 Solutions for the Deposition of Complex Optical Filters with Dual Ion Beam Sputtering R. Blacker, D. Deakins, A. Dummer, J. George, Veeco Instruments Inc., Y. Godwal, Colorado State University, I. Kameyama, S.M. Lee, N. Van Lieu, Veeco Instruments Inc., C.S. Menoni, Colorado State University, D. Siegfried, Veeco Instruments Inc., G. Vaschenko, Colorado State University, C. Montcalm, Veeco Instruments Inc. |
| TF-TuP23 Study of the Oxidation Rates of Vanadium and Scandium N.D. Webb, G.A. Acosta, D.D. Allred, Brigham Young University |
| TF-TuP24 The Distribution of Ge during Oxidation of epi-Si@sub 1-X@Ge@sub X@ B.G. Min, S.-K. Kang, Y.H. Hong, D.-H. Ko, Yonsei University, Korea |