AVS 49th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP13
Influence of Nitrogen Concentration on Conductivity of N-doped a-SiC:H Films Deposited by PE CVD

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Poster Session
Presenter: J. Huran, Slovak Academy of Sciences Bratislava, Slovakia
Authors: J. Huran, Slovak Academy of Sciences Bratislava, Slovakia
I. Hotovy, Slovak University of Technology Bratislava, Slovakia
J. Liday, Slovak University of Technology Bratislava, Slovakia
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The application of SiC in semiconductor device technology requires controlled and selective doping. Standard technologies for silicon device production, such as ion implantation at room temperature and the subsequent thermal annealing of radiation damage at moderate temperatures cannot be adopted because the radiation damage in SiC is extremely stable. Very high temperatures are necessary for its annealing and to activate dopants. One way to overcome this problem is to perform high current pulse electron or ion beam irradiation instead of high temperature annealing. Nitrogen-doped amorphous SiC films were grown by a PE CVD technique. Samples with different amounts of N were achieved by a small addition of ammonia into the gas mixture of silane and methane, which were directly introduced into the reaction chamber. The actual amount of nitrogen in the SiC films was determined by AES. The hydrogen concentration was determined by an elastic recoil detection method. For irradiation experiments we used electron beams with a kinetic energy 200 keV, a pulse duration of 300 ns, and a beam current of 150 A/cm@super2@. For the electrical characterization of the SiC films vertical diode structures were formed on the prepared SiC/Si samples. A quantitative analysis of the AES spectra was used to determine the concentration of carbon, silicon and nitrogen. It was found that with increased nitrogen doping and following activation of dopants the resistivity of the amorphous SiC films was substantially reduced.