AVS 49th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP8
Large Remanent Polarization of Cerium-modified Bismuth Titanate Thin Films for Nonvolatile Ferroelectric Random Access Memory

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Poster Session
Presenter: K.T. Kim, Chung-Ang University, Korea
Authors: K.T. Kim, Chung-Ang University, Korea
C.I. Kim, Chung-Ang University, Korea
D.H. Kang, Chung-Ang University, Korea
I.W. Shim, Chung-Ang University, Korea
Correspondent: Click to Email
The bismuth layer-structured ferroelectrics (BLSFs) are attractive lead-free material for ferroelectric random access memory (FeRAM) application because of its relative fatigue free character. However, BLSFs thin films have a disadvantage for high density integration in FeRAM in that they have a low remanent polarization. The ferroelectric properties, the crystal structure, and the microstructure of Bi@sub 4@Ti@sub 3@O@sub 12@ (BIT) thin films are influenced by the substitution of different sized ions in these bismuth layer-structured compounds. We investigated on the fabrication of cerium -substitution in BIT thin films using the MOD method, and on the effect of Ce-substitution in BIT thin films on the ferroelectric properties, such as the remanent polarization, fatigue, and retention characteristics. The incorporation of Ce into BIT results in a large 2Pr value, which is much larger than that of SrBi @sub 2@Ta @sub 2@O @sub 9@ (SBT) and Bi@sub 4-x@La@sub x@Ti@sub 3@O@sub 12@ (BLT) thin films at an applied voltage of 10 V.