AVS 49th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP18
Ultraviolet Emitting SrS:Te Thin Films

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Poster Session
Presenter: J.M. Fitz-Gerald, University of Virginia
Authors: P.D. Rack, University of Tennessee
J.M. Fitz-Gerald, University of Virginia
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The development of semiconductor based ultraviolet (UV) light sources is of critical importance for miniaturized ultraviolet light sources which have application in biological agent detection, non-line-of-sight covert communications, water purification, equipment/personnel decontamination, and white light generation. To this end, a significant amount of research is currently being performed to extend the III-V nitride blue lasers and light emitting diodes into the ultraviolet region. In this paper we will discuss the ultraviolet emission of pulsed laser evaporated thin film SrS:Te. SrS has an indirect bandgap of ~ 4.32 eV and when doped tellurium ultraviolet emission occurs from bound excitons. Un-doped SrS thin film properties (crystallinity and composition) as a function of the growth conditions will be presented and the effect that the tellurium concentration has on the ultraviolet emission will be discussed. The nature of the bound excitons will be discussed along and thermal quenching data will be presented.