AVS 49th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP17
Study of GaPN Epilayers Grown by Molecular Beam Epitaxy

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Poster Session
Presenter: M.A. Santana-Aranda, CINVESTAV-IPN, Mexico
Authors: M.A. Santana-Aranda, CINVESTAV-IPN, Mexico
C. Mejía-García, IPN, Mexico
M. Meléndez-Lira, CINVESTAV-IPN, Mexico
G. Contreras-Puente, IPN, Mexico
M. López-López, CINVESTAV-IPN, Mexico
K. Momose, Toyohashi University of Technology, Japan
A. Utsumi, Toyohashi University of Technology, Japan
H. Yonezu, Toyohashi University of Technology, Japan
Y. Furukawa, Toyohashi University of Technology, Japan
Correspondent: Click to Email
III-V-Nitrogen compounds open the possibility of monolithic integration on III-V based light emitting devices and Si based microelectronics. Small amounts of nitrogen in the GaPN alloy increase the light emitting efficiency of GaP. While, according to Vegard's rule, lattice matching of GaPN to Si is accomplished with around 2.1% nitrogen. In this work, we present the characterization of GaPN layers with up to 2.41% nitrogen content grown on GaP substrates by molecular beam epitaxy. Photoluminescence, contact-less electro-reflectance and Raman scattering measurements are performed in order to characterize the quality of the layers, and compared to results obtained with high-resolution x-ray diffraction, atomic force microscopy and transmission electron microscopy. The photoluminescence spectra are red shifted with increase of nitrogen content. The behavior of the energy band gap determined with the electro-reflectance measurements is compared to previously published calculations and experimental determinations. GaP-like LO mode, as observed by Raman scattering, is shifted toward lower frequencies because of two contributions; alloying and strain. Furthermore, high-resolution x-ray diffraction reveals that GaPN layers are partially relaxed, which is supported by transmission electron microscopy and atomic force microscopy. Transmission electron microscopy shows dislocations and micro-cracks for the samples with higher nitrogen content. Atomic force micrograph of the sample with 2.41% of Nitrogen show the presence of some grooves parallel to the direction, that are related to the process of strain relaxation.