AVS 49th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP10
Phase Changes of Chromium Nitride Films Annealed in Vacuum

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Poster Session
Presenter: H.-Y. Chen, National Chung Hsing University, Taiwan
Authors: H.-Y. Chen, National Chung Hsing University, Taiwan
F.-H. Lu, National Chung Hsing University, Taiwan
Correspondent: Click to Email
CrN films were deposited onto (100) Si substrates by a cathodic arc plasma deposition technique. The films were encapsulated in vacuum (~10@super -4@ torr) and then annealed over the temperature range of 500°C to 1200°C for 2 hr. X-ray diffraction results showed that Cr@sub 2@N phase appeared over the whole temperature range. The relative integrated intensity of Cr@sub 2@N phase increased rapidly with temperature. Additional CrSi@sub 2@ phase was formed above 900°C, which was resulted from the reaction between CrN films and Si substrates. The formation energy of CrSi@sub 2@ was also discussed. The formation of Cr@sub 2@N phase above 900°C would be enhanced by the formation of CrSi@sub 2@. The CrN films were detached from Si substrates at relatively high temperature, which might be mainly due to the thermal stress stemmed from a large thermal mismatch between Si (@alpha@=2.5x10@super-6@ K@super -1@) and CrSi@sub 2@ (@alpha@=9.0x10@super -6@ K@super -1@).